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EPA680A/EPA680AV
UPDATED 05/02/2006
High Efficiency Heterojunction Power FET
1320 60 231 D D D D 48
FEATURES
* * * * * * +36.5dBm TYPICAL OUTPUT POWER 6.5dB TYPICAL POWER GAIN FOR EPA680A AND 8.0dB FOR EPA680AV AT 12GHz 0.4 X 6800 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION AND PLATED HEAT SINK ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY AND RELIABILITY Idss SORTED IN 160mA PER BIN RANGE
440
100 40 G G G G
135
201
50
Chip Thickness: 45 15 microns : Via Hole No Via Hole For EPA680A All Dimensions In Microns
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS PARAMETERS/TEST CONDITIONS MIN P1dB G1dB PAE Idss Gm Vp BVgd BVgs Rth Output Power at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss Gain at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss Power Added Efficiency at 1dB Compression Vds=8V, Ids=50% Idss f=12GHz Saturated Drain Current Transconductance Pinch-off Voltage Drain Breakdown Voltage Source Breakdown Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V,Ids=20mA Igd=6.8mA Igs=6.8mA -13 -7 35.5 5.5 TYP 36.5 6.5 33 1250 1360 2050 2150 -1.0 -15 -14 6
Caution! ESD sensitive device.
EPA680A MAX MIN 35.5 7 EPA680AV UNIT TYP 36.5 8 36 2690 1250 1360 -2.5 -13 -7 2050 2150 -1.0 -15 -14 5.5
o
MAX dBm dB % 2690 mA mS -2.5 V V V C/W
Thermal Resistance (Au-Sn Eutectic Attach)
MAXIMUM RATINGS AT 25OC
SYMBOLS Vds Vgs Igsf Igsr Pin Tch Tstg Pt
Note:
PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reserve Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation
EPA680A ABSOLUTE1 12V -5V 30.6 mA -5.1 mA 33.5 dBm o 175 C o -65/175 C 23 W CONTINUOUS2 8V -3V 10.2 mA -1.7 mA @ 3dB Compression 175oC -65/175oC 23 W 12V -5V 30.6 mA -5.1 mA 33.5 dBm 175oC -65/175oC 25 W
EPA680AV ABSOLUTE1 CONTINUOUS2 8V -3V 10.2 mA -1.7 mA @ 3dB Compression 175oC -65/175oC 25 W
1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 3 Revised May 2006
EPA680A/EPA680AV
UPDATED 05/02/2006
High Efficiency Heterojunction Power FET
S-PARAMETERS
EPA680A 8V, 1/2 Idss
S12 Ang 90.7 78.2 68.8 60.1 52.6 44.8 38.3 32.0 25.9 20.4 15.2 10.5 5.9 1.6 -2.1 -5.0 -9.1 -11.9 -14.8 -16.4 -20.6 -23.2 -26.0 -29.9 -33.5 -37.4 Mag 0.009 0.011 0.011 0.013 0.014 0.015 0.016 0.015 0.016 0.017 0.018 0.020 0.021 0.023 0.024 0.022 0.024 0.028 0.028 0.033 0.036 0.038 0.043 0.049 0.056 0.066 Ang 21.7 23.5 26.1 36.0 41.6 45.8 48.4 47.5 53.6 54.5 52.5 52.9 46.6 53.1 47.6 45.8 45.2 41.0 40.1 41.9 39.0 40.6 35.9 31.5 29.0 24.1 Mag 0.681 0.697 0.711 0.727 0.745 0.765 0.798 0.817 0.840 0.857 0.870 0.885 0.887 0.904 0.900 0.914 0.920 0.915 0.926 0.936 0.948 0.935 0.949 0.937 0.944 0.939 S22 Ang -174.6 -174.5 -173.2 -172.8 -172.3 -172.6 -172.8 -173.6 -174.0 -175.2 -175.8 -177.2 -178.3 -179.8 179.5 178.6 177.4 175.8 175.8 175.3 175.1 176.8 175.1 175.2 173.6 172.1
Freq (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 Mag 0.943 0.944 0.945 0.942 0.941 0.940 0.944 0.944 0.942 0.945 0.947 0.946 0.946 0.948 0.939 0.945 0.938 0.931 0.937 0.931 0.919 0.924 0.907 0.908 0.898 0.888
S11 Ang -164.0 -173.1 -176.8 -179.5 178.9 176.6 174.7 173.0 171.1 169.2 167.6 166.5 165.3 165.0 164.4 164.5 164.5 164.8 164.8 165.3 163.0 161.1 159.4 156.4 155.1 152.3 Mag 7.210 3.626 2.393 1.770 1.441 1.133 0.921 0.761 0.638 0.550 0.477 0.422 0.376 0.339 0.309 0.285 0.262 0.240 0.223 0.211 0.195 0.185 0.180 0.173 0.169 0.168
S21
Note: The data included 0.7 mils diameter Au bonding wires: 4 gate wires, 15 mils each; 4 drain wires, 15 mils each; 10 source wires, 7 mils each.
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 3 Revised May 2006
EPA680A/EPA680AV
UPDATED 05/02/2006
High Efficiency Heterojunction Power FET
S-PARAMETERS
EPA680AV 8V, 1/2 Idss
S12 Ang 90.5 79.4 70.9 62.9 56.3 49.5 43.0 37.5 31.2 25.1 20.9 15.4 10.7 6.4 3.4 -1.3 -5.1 -8.3 -11.8 -14.6 -18.9 -22.8 -25.4 -28.2 -28.7 -30.3 Mag 0.011 0.012 0.011 0.013 0.012 0.013 0.013 0.015 0.014 0.013 0.018 0.016 0.017 0.019 0.017 0.017 0.017 0.017 0.018 0.020 0.022 0.021 0.022 0.024 0.022 0.027 Ang 16.4 17.2 25.3 32.7 38.2 43.4 53.8 55.3 55.3 58.5 62.1 62.8 59.7 62.2 58.8 53.4 59.0 50.7 51.7 45.1 42.2 45.3 50.5 51.6 50.1 50.9 Mag 0.651 0.660 0.665 0.683 0.712 0.733 0.748 0.768 0.784 0.808 0.835 0.853 0.848 0.860 0.869 0.884 0.888 0.906 0.911 0.910 0.920 0.931 0.932 0.936 0.911 0.933 S22 Ang -175.5 -175.8 -175.1 -174.6 -176.1 -176.6 -177.4 -177.2 -178.6 178.6 178.2 176.4 174.3 173.8 172.0 170.0 168.5 167.7 166.2 165.5 165.7 164.4 162.3 159.1 158.1 157.5
Freq (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
S11 Mag 0.962 0.965 0.968 0.971 0.970 0.974 0.974 0.976 0.981 0.978 0.975 0.984 0.984 0.980 0.991 0.973 0.993 0.981 0.986 0.989 0.981 0.986 0.987 0.988 0.980 0.961 Ang -166.0 -174.4 -177.9 180.0 179.9 178.3 177.2 175.6 174.6 173.2 171.9 170.5 170.9 169.1 169.7 168.6 168.0 167.8 166.4 165.4 159.4 159.1 158.3 158.7 158.9 159.2 Mag 7.084 3.544 2.340 1.727 1.334 1.089 0.918 0.785 0.684 0.598 0.523 0.463 0.407 0.349 0.320 0.281 0.256 0.226 0.210 0.196 0.192 0.172 0.160 0.142 0.126 0.114
S21
Note: The data included 0.7 mils diameter Au bonding wires: 4 gate wires, 15 mils each; 4 drain wires, 15 mils each;
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 3 of 3 Revised May 2006

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