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APT68GA60B APT68GA60S
600V High Speed PT IGBT
APT68GA60S TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT68GA60B poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. Single die IGBT
(R)
FEATURES
* Fast switching with low EMI * Very Low Eoff for maximum efficiency * Ultra low Cres for improved noise immunity * Low conduction loss * Low gate charge * Increased intrinsic gate resistance for low EMI * RoHS compliant
TYPICAL APPLICATIONS
* ZVS phase shifted and other full bridge * Half bridge * High power PFC boost * Welding * UPS, solar, and other inverters * High frequency, high efficiency industrial
Absolute Maximum Ratings
Symbol
Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TL
Parameter
Collector Emitter Voltage Continuous Collector Current @ TC = 25C Pulsed Collector Current Gate-Emitter Voltage
2 7
Ratings
600 121 68 202 30 520 202A @ 600V -55 to 150 300
Unit
V
Continuous Collector Current @ TC = 100C
1
A
V W
Total Power Dissipation @ TC = 25C Switching Safe Operating Area @ TJ = 150C Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
C
Static Characteristics
Symbol
VBR(CES) VCE(on) VGE(th) ICES IGES
TJ = 25C unless otherwise specified
Test Conditions
VGE = 0V, IC = 1.0mA VGE = 15V, IC = 40A VCE = 600V, VGE = 0V TJ = 25C TJ = 125C 3 TJ = 25C TJ = 125C
Parameter
Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current
Min
600
Typ
2.0 1.9 4.5
Max
2.5 6 250 2500 100
Unit
V
VGE =VCE , IC = 1mA
A nA
6 - 2009 052-6326 Rev C
VGS = 30V
Thermal and Mechanical Characteristics
Symbol
RJC WT Torque
Characteristic
Junction to Case Thermal Resistance Package Weight Mounting Torque (TO-247 Package), 4-40 or M3 screw
Min
-
Typ
5.9
Max
0.24 -
Unit
C/W g in*lbf
10
Microsemi Website - http://www.microsemi.com
Dynamic Characteristics
Symbol
Cies Coes Cres Qg Qge Qgc SSOA td(on) tr td(off) tf Eon2 Eoff td(on tr td(off) tf Eon2 Eoff
TJ = 25C unless otherwise specified
Test Conditions
Capacitance VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 300V IC = 40A TJ = 150C, RG = 4.74, VGE = 15V, L= 100uH, VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V IC = 40A RG = 4.74 TJ = +25C Inductive Switching (125C) VCC = 400V VGE = 15V IC = 40A RG = 4.74 TJ = +125C 202 21 27 133 88 715 607 20 26 175 129 1117 1025
APT68GA60B_S
Typ
5230 526 59 198 32 66 A nC pF
Parameter
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Emitter Charge Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy 6 Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy 6
Min
Max
Unit
ns
J
ns
J
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380s, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. 7 Continuous current limited by package lead temperature. Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6326 Rev C
6 - 2009
Typical Performance Curves
120 100 80 60 40 20 0
V
GE
APT68GA60B_S
350 300 TJ= 150C IC, COLLECTOR CURRENT (A) 250 9V 200 150 100 50 0 8V 15V 13V 10V
= 15V
TJ= 125C TJ= 55C TJ= 25C
IC, COLLECTOR CURRENT (A)
7V 6V 5V 0 4 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25C)
I = 40A C T = 25C
J
0
1
2
3
4
5
6
240 200 160 120 80
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
20
IC, COLLECTOR CURRENT (A)
15 VCE = 120V 10 VCE = 300V VCE = 480V 5
TJ= 25C 40 TJ= 125C 0 0 2 4 6 TJ= -55C 8 10 12
0
0
40
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
4
VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
80 120 160 GATE CHARGE (nC) FIGURE 4, Gate charge
200
5
3
4
IC = 80A IC = 40A
3
IC = 80A IC = 40A
2 IC = 20A 1
2
1
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC = 20A
0
6
8
10
12
14
16
VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
1.15
50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 140 120
0
0
25
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.10 1.05 1.00 0.95
IC, DC COLLECTOR CURRENT (A)
100 80 60 40 20 0
0.90 0.85 0.80 0.75 0.70
0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature
-50 -25
75 100 125 150 TC, Case Temperature (C) FIGURE 8, DC Collector Current vs Case Temperature
25
50
052-6326 Rev C
6 - 2009
Typical Performance Curves
30 25 20 15 10 5 0 VGE = 15V td(OFF), TURN-OFF DELAY TIME (ns)
VCE = 400V TJ = 25C, or 125C RG = 4.7 L = 100H
250
APT68GA60B_S
td(ON), TURN-ON DELAY TIME (ns)
200
VGE =15V,TJ=125C
150
100
VGE =15V,TJ=25C
50
VCE = 400V RG = 4.7 L = 100H
0
20
40
60
80
0
0
10
20
30
40
50
60
70
80
ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 70 RG = 4.7, L = 100H, VCE = 400V 60 50 tr, RISE TIME (ns) 40 30 20 10 0
TJ = 25 or 125C,VGE = 15V
ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 160 140 120 tr, FALL TIME (ns) 100 80 60 40 20
RG = 4.7, L = 100H, VCE = 400V TJ = 25C, VGE = 15V TJ = 125C, VGE = 15V
0
10
20
30
40
50
60
70
80
0
0
10
20
30
40
50
60
70
80
ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 3000 EOFF, TURN OFF ENERGY LOSS (J) Eon2, TURN ON ENERGY LOSS (J)
V = 400V CE V = +15V GE R =4.7
G
ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 3000 2500 2000
TJ = 125C
V = 400V CE V = +15V GE R = 4.7
G
2000
TJ = 125C
1500 1000 500 0
TJ = 25C
1000
TJ = 25C
0 10 20 30 40 50 60 70 80 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 8000 SWITCHING ENERGY LOSSES (J) 7000 6000 5000 4000 3000
Eon2,40A Eoff,80A
V = 400V CE V = +15V GE T = 125C
J
0
0 10 20 30 40 50 60 70 80 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Turn-Off Energy Loss vs Collector Current 3000
V = 400V CE V = +15V GE R = 4.7
G
Eon2,80A
SWITCHING ENERGY LOSSES (J)
Eon2,80A Eoff,80A
2500 2000 1500
6 - 2009
Eon2,40A
1000 500 0
2000
Eoff,40A
Eoff,40A Eon2,20A Eoff,20A
052-6326 Rev C
1000 0 0
Eon2,20A Eoff,20A
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
Typical Performance Curves
10000 Cies IC, COLLECTOR CURRENT (A) 1000
APT68GA60B_S
C, CAPACITANCE (pF)
100
1000 Coes 100 Cres 10
10
1
0 100 200 300 400 500 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
1 10 100 800 VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area
0.1
0.30 ZJC, THERMAL IMPEDANCE (C/W) 0.25 D = 0.9 0.20 0.7 0.15 0.10 0.05 0 10
-5
0.5 0.3 0.1 0.05 10-4 SINGLE PULSE 10-3 10-2
Note:
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
0.1
1
RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
052-6326 Rev C
6 - 2009
APT68GA60B_S
10% Gate Voltage td(on) 90% tr
V CC IC V CE
TJ = 125C
APT30DQ60
Collector Current 5% Collector Voltage
5%
10%
Switching Energy
A D.U.T.
Figure 12, Inductive Switching Test Circuit
Figure 13, Turn-on Switching Waveforms and Definitions
90% td(off)
TJ = 125C Gate Voltage
Collector Voltage tf 10%
0
Collector Current
Switching Energy
Figure 14, Turn-off Switching Waveforms and Definitions
TO-247 (B) Package Outline
e3 100% Sn Plated
(Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
D3PAK Package Outline
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 13.41 (.528) 13.51(.532)
Collector
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
1.04 (.041) 1.15(.045)
Collector
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.}
6 - 2009
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)
Gate Collector
Heat Sink (Drain) and Leads are Plated
Emitter
2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs.
052-6326 Rev C
Emitter Collector
Dimensions in Millimeters and (Inches)
Gate Dimensions in Millimeters (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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