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APT58F50J
500V,58A,0.065Max,trr 320ns
N-Channel FREDFET
Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.
S G D
S
SO
2 T-
27
"UL Recognized"
ISOTOP (R)
file # E145592
APT58F50J
G
D
Single die FREDFET
S
FEATURES
*FastswitchingwithlowEMI *Lowtrrforhighreliability *UltralowCrssforimprovednoiseimmunity *Lowgatecharge *Avalancheenergyrated *RoHScompliant
TYPICAL APPLICATIONS
* ZVSphaseshiftedandotherfullbridge *Halfbridge *PFCandotherboostconverter * Buckconverter *Singleandtwoswitchforward *Flyback
Absolute Maximum Ratings
Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive
1
Ratings 58 37 270 30 1845 42
Unit
A
V mJ A
Thermal and Mechanical Characteristics
Symbol PD RJC RCS TJ,TSTG VIsolation WT Characteristic Total Power Dissipation @ TC = 25C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) Package Weight -55 2500 1.03 29.2 10 1.1 0.15 150 Min Typ Max 540 0.23 Unit W C/W C V
Rev B 05-2009 050-8177
oz g in*lbf N*m
Torque
Terminals and Mounting Screws.
MicrosemiWebsite-http://www.microsemi.com
Static Characteristics
Symbol
VBR(DSS) VBR(DSS)/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS
TJ=25Cunlessotherwisespecified
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 250A VGS = 10V, ID = 42A VGS = VDS, ID = 2.5mA VDS = 500V VGS = 0V TJ = 25C TJ = 125C
APT58F50J
Typ 0.60 0.055 4 -10 Max Unit V V/C V mV/C 250 1000 100 A nA
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance
3
Min 500
Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current
2.5
0.065 5
VGS = 30V
Dynamic Characteristics
Symbol
gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf
4
TJ=25Cunlessotherwisespecified
Test Conditions
VDS = 50V, ID = 42A VGS = 0V, VDS = 25V f = 1MHz
Parameter
Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related
Min
Typ 65 13500 185 1455 845
Max
Unit S
pF
VGS = 0V, VDS = 0V to 333V
5
Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time
VGS = 0 to 10V, ID = 42A, VDS = 250V ResistiveSwitching VDD = 333V, ID = 42A RG = 2.2 6 , VGG = 15V
425 340 75 155 60 70 155 50 nC
ns
Source-Drain Diode Characteristics
Symbol
IS ISM VSD trr Qrr Irrm dv/dt
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt
Test Conditions
MOSFET symbol showing the integral reverse p-n junction diode (body diode)
Min
D
Typ
Max 58
Unit
G S
TJ = 25C TJ = 125C
A 270 1.0 320 600 V ns C A 20 V/ns
ISD = 42A, TJ = 25C, VGS = 0V
ISD = 42A 3 diSD/dt = 100A/s VDD = 100V
TJ = 25C TJ = 125C TJ = 25C TJ = 125C
290 500 1.67 4.36 12 17.8
ISD 42A, di/dt 1000A/s, VDD = 333V, TJ = 125C
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25C, L = 2.08mH, RG = 25, IAS = 42A.
05-2009 Rev B 050-8177
3 Pulse test: Pulse Width < 380s, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -3.14E-7/VDS^2 + 7.31E-8/VDS + 2.09E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemireservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
350 300 ID, DRAIN CURRENT (A) 250 200
V
GS
= 10V
160
T = 125C
J
APT58F50J
V
GS
= 7,8 & 10V
140 ID, DRIAN CURRENT (A)
TJ = -55C
120 100 80 60 40
5V 6V
TJ = 25C
150 100 50 0
TJ = 125C TJ = 150C
20 0 5 10 15 20 25 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) Figure1,OutputCharacteristics
NORMALIZED TO VGS = 10V @ 42A
4.5V
0
0
5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure2,OutputCharacteristics
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
2.5
280 240 ID, DRAIN CURRENT (A) 200 160 120 80 40
VDS> ID(ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
2.0
1.5
TJ = -55C TJ = 25C TJ = 125C
1.0
0.5
0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure3,RDS(ON)vsJunctionTemperature 120 100
0
0
1 2 3 4 5 6 7 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure4,TransferCharacteristics Ciss
8
20,000 10,000
gfs, TRANSCONDUCTANCE
TJ = -55C
80 60 40 20 0
C, CAPACITANCE (pF)
TJ = 25C TJ = 125C
1000 Coss
100
Crss
0
10
20 30 40 50 60 70 80 ID, DRAIN CURRENT (A) Figure5,GainvsDrainCurrent
90
10
100 200 300 400 500 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure6,CapacitancevsDrain-to-SourceVoltage
0
16 VGS, GATE-TO-SOURCE VOLTAGE (V) 14 12 10 8 6 4 2
ID = 42A
280 ISD, REVERSE DRAIN CURRENT (A) 240 200 160
TJ = 25C
VDS = 100V VDS = 250V
120 80 40 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure8,ReverseDrainCurrentvsSource-to-DrainVoltage 0 0 Rev B 05-2009 050-8177
TJ = 150C
VDS = 400V
100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) Figure7,GateChargevsGate-to-SourceVoltage
0
0
300 100 ID, DRAIN CURRENT (A)
IDM
300 100 ID, DRAIN CURRENT (A)
IDM
APT58F50J
10
Rds(on)
13s 100s 1ms 10ms 100ms DC line TJ = 125C TC = 75C
10
Rds(on)
13s 100s 1ms 10ms 100ms DC line
1
1
TJ = 150C TC = 25C
0.1
1
10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure9,ForwardSafeOperatingArea
0.1
Scaling for Different Case & Junction Temperatures: ID = ID(T = 25C)*(TJ - TC)/125
C
10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure10,MaximumForwardSafeOperatingArea
1
0.25 D = 0.9 0.20 0.7 0.15 0.5 0.10 0.3 0.05 0.1 0 0.05 10-5 10-4 SINGLE PULSE
Note:
ZJC, THERMAL IMPEDANCE (C/W)
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t1 = Pulse Duration
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure11.MaximumEffectiveTransientThermalImpedanceJunction-to-CasevsPulseDuration
1.0
SOT-227 (ISOTOP(R))PackageOutline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
05-2009
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
* Source
Drain
* Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal.
Rev B
* Source Dimensions in Millimeters and (Inches)
Gate
050-8177
ISOTOP(R) is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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