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| TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543 DEVICES LEVELS 2N6770 2N6770T1 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Drain - Source Voltage Gate - Source Voltage Continuous Drain Current TC = +25C Continuous Drain Current TC = +100C Max. Power Dissipation Drain to Source On State Resistance Operating & Storage Temperature Note: (1) Derated Linearly by 1.2 W/C for TC > +25C (2) VGS = 10Vdc, ID = 7.75A ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc Gate-Source Voltage (Threshold) VDS VGS, ID = 0.25mA VDS VGS, ID = 0.25mA, Tj = +125C VDS VGS, ID = 0.25mA, Tj = -55C Gate Current VGS = 20V, VDS = 0V VGS = 20V, VDS = 0V, Tj = +125C Drain Current VGS = 0V, VDS = 400V VGS = 0V, VDS = 400V, Tj = +125C Static Drain-Source On-State Resistance VGS = 10V, ID = 7.75A pulsed VGS = 10V, ID = 12A pulsed Tj = +125C VGS = 10V, ID = 7.75A pulsed Diode Forward Voltage VGS = 0V, ID = 12A pulsed Symbol V(BR)DSS VGS(th)1 VGS(th)2 VGS(th)3 IGSS1 IGSS2 IDSS1 IDSS2 rDS(on)1 rDS(on)2 rDS(on)3 VSD Min. 500 2.0 1.0 4.0 5.0 100 200 Max. Unit Vdc Symbol VDS VGS ID1 ID2 Ptl Rds(on) Top, Tstg Value 500 20 12 7.75 150 (1) 0.4 (2) Unit Vdc Vdc Adc Adc W C -55 to +150 TO-204AA (TO-3) 2N6770 Vdc nAdc 25 0.25 0.4 0.5 0.88 1.7 Adc mAdc Vdc TO-254AA 2N6770T1 T4-LDS-0044 Rev. 1 (072798) Page 1 of 2 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge SWITCHING CHARACTERISTICS Parameters / Test Conditions Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time Diode Reverse Recovery Time ID = 12A, VGS = 10Vdc, Gate drive impedance = 2.35, VDD = 250Vdc di/dt 100A/s, VDD 30V, IF = 12A Symbol td(on) tr td(off) tf trr Min. Max. 35 190 170 130 1600 Unit Symbol Qg(on) Qgs Qgd Min. Max. 120 19 70 Unit nC VGS = 10V, ID = 12A VDS = 50V ns ns T4-LDS-0044 Rev. 1 (072798) Page 2 of 2 |
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