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 MCP6021/1R/2/3/4
Rail-to-Rail Input/Output, 10 MHz Op Amps
Features
* * * * Rail-to-Rail Input/Output Wide Bandwidth: 10 MHz (typical) Low Noise: 8.7 nV/Hz, at 10 kHz (typical) Low Offset Voltage: - Industrial Temperature: 500 V (maximum) - Extended Temperature: 250 V (maximum) Mid-Supply VREF: MCP6021 and MCP6023 Low Supply Current: 1 mA (typical) Total Harmonic Distortion: - 0.00053% (typical, G = 1 V/V) Unity Gain Stable Power Supply Range: 2.5V to 5.5V Temperature Range: - Industrial: -40C to +85C - Extended: -40C to +125C
Description
The MCP6021, MCP6021R, MCP6022, MCP6023 and MCP6024 from Microchip Technology Inc. are rail-torail input and output op amps with high performance. Key specifications include: wide bandwidth (10 MHz), low noise (8.7 nV/Hz), low input offset voltage and low distortion (0.00053% THD+N). The MCP6023 also offers a Chip Select pin (CS) that gives power savings when the part is not in use. The single MCP6021 and MCP6021R are available in SOT-23-5. The single MCP6021, single MCP6023 and dual MCP6022 are available in 8-lead PDIP, SOIC and TSSOP. The Extended Temperature single MCP6021 is available in 8-lead MSOP. The quad MCP6024 is offered in 14-lead PDIP, SOIC and TSSOP packages. The MCP6021/1R/2/3/4 family is available in Industrial and Extended temperature ranges. It has a power supply range of 2.5V to 5.5V.
* * * * * *
Applications
* * * * * * Automotive Multi-Pole Active Filters Audio Processing DAC Buffer Test Equipment Medical Instrumentation
Package Types
MCP6021 SOT-23-5
VOUT 1 VSS 2 VIN+ 3 4 VIN- 5 VDD
MCP6022 PDIP SOIC, TSSOP
VOUTA 1 VINA- 2 VINA+ 3 VSS 4 8 VDD 7 VOUTB 6 VINB- 5 VINB+
Design Aids
* * * * * * SPICE Macro Models FilterLab(R) Software MindiTM Circuit Designer & Simulator Microchip Advanced Part Selector (MAPS) Analog Demonstration and Evaluation Boards Application Notes
MCP6021R SOT-23-5
VOUT 1 VDD 2 VIN+ 3 4 VIN- 5 VSS
MCP6023 PDIP SOIC, TSSOP
NC 1 VIN- 2 VIN+ 3 VSS 4 8 CS 7 VDD 6 VOUT 5 VREF
MCP6021 PDIP SOIC, MSOP, TSSOP
Typical Application
Photo Detector 5.6 pF 100 k 100 pF MCP6021 VDD/2 Transimpedance Amplifier
NC 1 VIN- 2 VIN+ 3 VSS 4
8 NC 7 VDD 6 VOUT 5 VREF
MCP6024 PDIP SOIC, TSSOP
VOUTA 1 VINA- 2 VINA+ 3 VDD 4 VINB+ 5 VINB- 6 VOUTB 7 14 VOUTD 13 VIND- 12 VIND+ 11 VSS 10 VINC+ 9 VINC- 8 VOUTC
(c) 2009 Microchip Technology Inc.
DS21685D-page 1
MCP6021/1R/2/3/4
NOTES:
DS21685D-page 2
(c) 2009 Microchip Technology Inc.
MCP6021/1R/2/3/4
1.0 ELECTRICAL CHARACTERISTICS
Notice: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. See Section 4.1.2 " Input Voltage and Current Limits".
Absolute Maximum Ratings
VDD - VSS ........................................................................7.0V Current at Analog Input Pins (VIN+, VIN-).....................2 mA Analog Inputs (VIN+, VIN-) ........ VSS - 1.0V to VDD + 1.0V All Other Inputs and Outputs ......... VSS - 0.3V to VDD + 0.3V Difference Input Voltage ...................................... |VDD - VSS| Output Short Circuit Current ................................ Continuous Current at Output and Supply Pins ............................30 mA Storage Temperature ................................. -65 C to +150 C Maximum Junction Temperature (TJ)........................ .+150 C ESD Protection On All Pins (HBM; MM) .............. 2 kV; 200V
DC ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, TA = +25C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2, VOUT VDD/2 and RL = 10 k to VDD/2. Parameters Input Offset Input Offset Voltage: Industrial Temperature Parts Extended Temperature Parts Extended Temperature Parts Input Offset Voltage Temperature Drift Power Supply Rejection Ratio Input Current and Impedance Input Bias Current Industrial Temperature Parts Extended Temperature Parts Input Offset Current Common-Mode Input Impedance Differential Input Impedance Common-Mode Common-Mode Input Range Common-Mode Rejection Ratio VCMR CMRR CMRR CMRR Voltage Reference (MCP6021 and MCP6023 only) VREF Accuracy (VREF - VDD/2) VREF Temperature Drift Open-Loop Gain DC Open-Loop Gain (Large Signal) Output Maximum Output Voltage Swing Output Short Circuit Current VOL, VOH ISC ISC VSS+15 -- -- -- 30 22 VDD-20 -- -- mV mA mA 0.5V input overdrive VDD = 2.5V VDD = 5.5V AOL 90 110 -- dB VCM = 0V, VOUT = VSS+0.3V to VDD-0.3V VREF_ACC VREF/T
A
Sym
Min
Typ
Max
Units
Conditions
VOS VOS VOS VOS/TA PSRR IB IB IB IOS ZCM ZDIFF
-500 -250 -2.5 -- 74 -- -- -- -- -- -- VSS-0.3 74 70 74 -50 --
-- -- -- 3.5 90 1 30 640 1 1013||6 1013||3 -- 90 85 90 -- 100
+500 +250 +2.5 -- -- -- 150 5,000 -- -- -- VDD+0.3 -- -- -- +50 --
V V mV
VCM = 0V VCM = 0V, VDD = 5.0V VCM = 0V, VDD = 5.0V TA = -40C to +125C VCM = 0V
V/C TA = -40C to +125C dB pA pA pA pA ||pF ||pF V dB dB dB mV V/C TA = -40C to +125C VDD = 5V, VCM = -0.3V to 5.3V VDD = 5V, VCM = 3.0V to 5.3V VDD = 5V, VCM = -0.3V to 3.0V TA = +85C TA = +125C
(c) 2009 Microchip Technology Inc.
DS21685D-page 3
MCP6021/1R/2/3/4
AC ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, TA = +25C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2, VOUT VDD/2, RL = 10 k to VDD/2 and CL = 60 pF. Parameters Power Supply Supply Voltage Quiescent Current per Amplifier AC Response Gain Bandwidth Product Phase Margin Settling Time, 0.2% Slew Rate f = 1 kHz, G = +1 V/V f = 1 kHz, G = +1 V/V, RL = 600 f = 1 kHz, G = +1 V/V f = 1 kHz, G = +10 V/V f = 1 kHz, G = +100 V/V Noise Input Noise Voltage Input Noise Voltage Density Input Noise Current Density Eni eni ini -- -- -- 2.9 8.7 3 -- -- -- Vp-p fA/Hz f = 0.1 Hz to 10 Hz f = 1 kHz nV/Hz f = 10 kHz GBWP PM tSETTLE SR THD+N THD+N THD+N THD+N THD+N -- -- -- -- -- -- -- -- -- 10 65 250 7.0 0.00053 0.00064 0.0014 0.0009 0.005 -- -- -- -- -- -- -- -- -- MHz ns V/s % % % % % VOUT = 0.25V to 3.25V (1.75V 1.50VPK), VDD = 5.0V, BW = 22 kHz VOUT = 0.25V to 3.25V (1.75V 1.50VPK), VDD = 5.0V, BW = 22 kHz VOUT = 4VP-P, VDD = 5.0V, BW = 22 kHz VOUT = 4VP-P, VDD = 5.0V, BW = 22 kHz VOUT = 4VP-P, VDD = 5.0V, BW = 22 kHz G = +1 V/V G = +1 V/V, VOUT = 100 mVp-p VDD IQ 2.5 0.5 -- 1.0 5.5 1.35 V mA IO = 0 Sym Min Typ Max Units Conditions
Total Harmonic Distortion Plus Noise
MCP6023 CHIP SELECT (CS) ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, TA = +25C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2, VOUT VDD/2, RL = 10 k to VDD/2 and CL = 60 pF. Parameters CS Low Specifications CS Logic Threshold, Low CS Input Current, Low CS High Specifications CS Logic Threshold, High CS Input Current, High GND Current Amplifier Output Leakage CS Dynamic Specifications CS Low to Amplifier Output Turn-on Time CS High to Amplifier Output High-Z Time Hysteresis tON tOFF VHYST -- -- -- 2 0.01 0.6 10 -- -- s s V G = +1, VIN = VSS, CS = 0.2VDD to VOUT = 0.45VDD time G = +1, VIN = VSS, CS = 0.8VDD to VOUT = 0.05VDD time VDD = 5.0V, Internal Switch VIH ICSH ISS IO(LEAK) 0.8 VDD -- -2 -- -- 0.01 -0.05 0.01 VDD 2.0 -- -- V A A A CS = VDD CS = VDD CS = VDD VIL ICSL VSS -1.0 -- 0.01 0.2 VDD -- V A CS = VSS Sym Min Typ Max Units Conditions
DS21685D-page 4
(c) 2009 Microchip Technology Inc.
MCP6021/1R/2/3/4
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, VDD = +2.5V to +5.5V and VSS = GND. Parameters Temperature Ranges Industrial Temperature Range Extended Temperature Range Operating Temperature Range Storage Temperature Range Thermal Package Resistances Thermal Resistance, 5L-SOT-23 Thermal Resistance, 8L-PDIP Thermal Resistance, 8L-SOIC Thermal Resistance, 8L-MSOP Thermal Resistance, 8L-TSSOP Thermal Resistance, 14L-PDIP Thermal Resistance, 14L-SOIC Thermal Resistance, 14L-TSSOP Note 1: JA JA JA JA JA JA JA JA -- -- -- -- -- -- -- -- 256 85 163 206 124 70 120 100 -- -- -- -- -- -- -- -- C/W C/W C/W C/W C/W C/W C/W C/W TA TA TA TA -40 -40 -40 -65 -- -- -- -- +85 +125 +125 +150 C C C C Note 1 Sym Min Typ Max Units Conditions
The industrial temperature devices operate over this extended temperature range, but with reduced performance. In any case, the internal junction temperature (TJ) must not exceed the absolute maximum specification of 150C.
1.1
CS tON VOUT ISS ICS High-Z Amplifier On -1 mA (typical) tOFF High-Z
Test Circuits
The test circuits used for the DC and AC tests are shown in Figure 1-2 and Figure 1-3. The bypass capacitors are laid out according to the rules discussed in Section 4.7 "Supply Bypass". VDD 0.1 F 1 F CB1 CB2 MCP6021 RF 2 k CL 60 pF VL VOUT RL 10 k
-50 nA (typical) 10 nA (typical)
-50 nA (typical) 10 nA (typical)
VIN
RN 1 k
10 nA (typical)
FIGURE 1-1: Timing diagram for the CS pin on the MCP6023.
VDD/2 RG 2 k
FIGURE 1-2: AC and DC Test Circuit for Most Non-Inverting Gain Conditions.
VDD 0.1 F 1 F CB1 CB2 MCP6021 RF 2 k CL 60 pF VOUT RL 10 k VL
VDD/2 RN 1 k
VIN
RG 2 k
FIGURE 1-3: AC and DC Test Circuit for Most Inverting Gain Conditions.
(c) 2009 Microchip Technology Inc.
DS21685D-page 5
MCP6021/1R/2/3/4
NOTES:
DS21685D-page 6
(c) 2009 Microchip Technology Inc.
MCP6021/1R/2/3/4
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2, VOUT VDD/2, RL = 10 k to VDD/2 and CL = 60 pF.
16% 14% 12% 10% 8% 6% 4% 2% 0% -500 -400 -300 -200 -100 100 200 300 400 500 0
24% 22% 20% 18% 16% 14% 12% 10% 8% 6% 4% 2% 0%
Percentage of Occurances
Percentage of Occurances
I-Temp Parts
1192 Samples VCM = 0V TA = +25C
I-Temp Parts
1192 Samples VCM = 0V TA = -40C to +85C
-20
-16
-12
12
16 16 5.5
Input Offset Voltage (V)
Input Offset Voltage Drift (V/C)
FIGURE 2-1: Input Offset Voltage, (Industrial Temperature Parts).
24% 22% 20% 18% 16% 14% 12% 10% 8% 6% 4% 2% 0%
FIGURE 2-4: Input Offset Voltage Drift, (Industrial Temperature Parts).
24% 22% 20% 18% 16% 14% 12% 10% 8% 6% 4% 2% 0%
Percentage of Occurances
-240
-200
-160
-120
120
160
200
240
-80
-40
40
80
0
Percentage of Occurances
E-Temp Parts
438 Samples VDD = 5.0V VCM = 0V TA = +25C
E-Temp Parts
438 Samples VCM = 0V TA = -40C to +125C
-8
-20
-16
-12
-4
12
Input Offset Voltage (V)
Input Offset Voltage Drift (V/C)
FIGURE 2-2: Input Offset Voltage, (Extended Temperature Parts).
500 400 VDD = 2.5V 300 200 100 0 -100 -200 -300 -400 -500 -0.5 0.0 0.5
FIGURE 2-5: Input Offset Voltage Drift, (Extended Temperature Parts).
500 400 300 200 100 0 -100 -200 -300 -400 -500
Input Offset Voltage (V)
-40C +25C +85C +125C
Input Offset Voltage (V)
VDD = 5.5V
-40C +25C +85C +125C
-0.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1.0
1.5
2.0
2.5
3.0
Common Mode Input Voltage (V)
Common Mode Input Voltage (V)
FIGURE 2-3: Input Offset Voltage vs. Common Mode Input Voltage with VDD = 2.5V.
FIGURE 2-6: Input Offset Voltage vs. Common Mode Input Voltage with VDD = 5.5V.
(c) 2009 Microchip Technology Inc.
DS21685D-page 7
6.0
20
0
4
8
20
-8
-4
0
4
8
MCP6021/1R/2/3/4
Note: Unless otherwise indicated, TA = +25C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2, VOUT VDD/2, RL = 10 k to VDD/2 and CL = 60 pF.
100 Input Offset Voltage (V) Input Offset Voltage (V) 50 0 -50 -100 -150 -200 -250 -300 -50 -25 0 25 50 75 100 Ambient Temperature (C) 125 VDD = 5.0V VCM = 0V 200 150 100 50 0 -50 -100 -150 -200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Output Voltage (V) VDD = 2.5V VDD = 5.5V
VCM = VDD/2
FIGURE 2-7: Temperature.
1,000 Input Noise Voltage Density (nV/Hz)
Input Offset Voltage vs.
FIGURE 2-10: Output Voltage.
24 22 20 18 16 14 12 10 8 6 4 2 0 Input Noise Voltage Density (nV/Hz)
Input Offset Voltage vs.
VDD = 5.0V
100
f = 1 kHz
10
f = 10 kHz
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
1.E+06
0.1
1
10
100 1k 10k Frequency (Hz)
100k 1M
-0.5
Common Mode Input Voltage (V)
FIGURE 2-8: vs. Frequency.
100 90 CMRR, PSRR (dB) 80 70 60 50 40 30 20 100
1.E+02 1.E+03
Input Noise Voltage Density
FIGURE 2-11: Input Noise Voltage Density vs. Common Mode Input Voltage.
110
PSRR+ PSRRPSRR, CMRR (dB)
105 100 95 90 85 80 75 PSRR (VCM = 0V) CMRR
CMRR
1.E+04
1.E+05
1.E+06
70 -50 -25 0 25 50 75 100 Ambient Temperature (C) 125
1k
10k Frequency (Hz)
100k
1M
FIGURE 2-9: Frequency.
CMRR, PSRR vs.
FIGURE 2-12: Temperature.
CMRR, PSRR vs.
DS21685D-page 8
(c) 2009 Microchip Technology Inc.
5.5
1
MCP6021/1R/2/3/4
Note: Unless otherwise indicated, TA = +25C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2, VOUT VDD/2, RL = 10 k to VDD/2 and CL = 60 pF.
Input Bias, Offset Currents (pA) 10,000
1,000
Input Bias, Offset Currents (pA)
VDD = 5.5V
IB, TA = +125C IOS, TA = +125C IB, TA = +85C
10,000
VCM = VDD VDD = 5.5V
1,000 IB
100
100
10
IOS, TA = +85C
10
IOS
1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Common Mode Input Voltage (V)
1 25 35 45 55 65 75 85 95 105 115 125 Ambient Temperature (C)
FIGURE 2-13: Input Bias, Offset Currents vs. Common Mode Input Voltage.
1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0
FIGURE 2-16: vs. Temperature.
1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0
Input Bias, Offset Currents
Quiescent Current (mA/amplifier)
VDD = 5.5V VDD = 2.5V
+125C +85C +25C -40C
Quiescent Current (mA/amplifier)
VCM = VDD - 0.5V -50 -25 0 25 50 75 100 Ambient Temperature (C) 125
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Power Supply Voltage (V)
FIGURE 2-14: Supply Voltage.
35 Output Short Circuit Current (mA) 30 25 20 15 10 5 0
Quiescent Current vs.
FIGURE 2-17: Temperature.
120 110 100 90 80 70 60 50 40 30 20 10 0 -10 -20
Quiescent Current vs.
+125C +85C +25C -40C 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Supply Voltage (V)
1.E+00
1
0 -15 -30 -45 -60 -75 Phase -90 -105 -120 -135 -150 Gain -165 -180 -195 -210 10 100 1k 10k 100k 1M 10M 100M
1.E+01 1.E+02 1.E+03 1.E+04 1.E+05 1.E+06 1.E+07 1.E+08
Open-Loop Gain (dB)
Frequency (Hz)
FIGURE 2-15: Output Short-Circuit Current vs. Supply Voltage.
FIGURE 2-18: Frequency.
Open-Loop Gain, Phase vs.
(c) 2009 Microchip Technology Inc.
DS21685D-page 9
Open-Loop Phase ()
MCP6021/1R/2/3/4
Note: Unless otherwise indicated, TA = +25C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2, VOUT VDD/2, RL = 10 k to VDD/2 and CL = 60 pF.
130 DC Open-Loop Gain (dB) DC Open-Loop Gain (dB) VDD = 5.5V 120 110 VDD = 2.5V 100 90 80 100
1.E+02
120 115 110 105 100 95 90
1.E+03 1.E+04 1.E+05
VDD = 5.5V
VDD = 2.5V
1k 10k Load Resistance ()
100k
-50
-25
0 25 50 75 100 Ambient Temperature (C)
125
FIGURE 2-19: Load Resistance.
120 DC Open-Loop Gain (dB)
DC Open-Loop Gain vs.
FIGURE 2-22: Temperature.
14 Gain Bandwidth Product (MHz)
DC Open-Loop Gain vs.
105 90 75 60 Phase Margin, G = +1 45 30 VDD = 5.0V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Common Mode Input Voltage (V) 15 0 Phase Margin, G = +1 () Gain Bandwidth Product
VCM = VDD/2 110 VDD = 5.5V 100 90 80 70 0.00 VDD = 2.5V
12 10 8 6 4 2 0
0.05
0.10
0.15
0.20
0.25
0.30
Output Voltage Headroom (V); VDD - VOH or VOL - VSS
FIGURE 2-20: Small Signal DC Open-Loop Gain vs. Output Voltage Headroom.
10 9 8 7 6 5 4 3 2 1 0 -50 100 90 80 70 60 50 40 30 20 10 0 125
FIGURE 2-23: Gain Bandwidth Product, Phase Margin vs. Common Mode Input Voltage.
14 105 Gain Bandwidth Product 90 75 Phase Margin, G = +1 60 45 30 VDD = 5.0V VCM = VDD/2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Output Voltage (V) 15 0 Phase Margin, G = +1 ()
Gain Bandwidth Product (MHz)
Phase Margin, G = +1 ()
Gain Bandwidth Product (MHz)
12 10 8 6 4 2 0
GBWP, VDD = 5.5V GBWP, VDD = 2.5V PM, VDD = 2.5V PM, VDD = 5.5V
-25 0 25 50 75 100 Ambient Temperature (C)
FIGURE 2-21: Gain Bandwidth Product, Phase Margin vs. Temperature.
FIGURE 2-24: Gain Bandwidth Product, Phase Margin vs. Output Voltage.
DS21685D-page 10
(c) 2009 Microchip Technology Inc.
MCP6021/1R/2/3/4
Note: Unless otherwise indicated, TA = +25C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2, VOUT VDD/2, RL = 10 k to VDD/2 and CL = 60 pF.
11 10 9 8 7 6 5 4 3 2 1 0
10 Maximum Output Voltage Swing (VP-P)
Falling, VDD = 5.5V Rising, VDD = 5.5V
VDD = 5.5V VDD = 2.5V 1
Slew Rate (V/s)
Falling, VDD = 2.5V Rising, VDD = 2.5V
-50
-25
0 25 50 75 Ambient Temperature (C)
100
125
0.1
1.E+04
1.E+05
1.E+06
1.E+07
10k
100k 1M Frequency (Hz)
10M
FIGURE 2-25:
Slew Rate vs. Temperature.
FIGURE 2-28: Maximum Output Voltage Swing vs. Frequency.
0.1000% G = +100 V/V
0.1000%
f = 1 kHz BWMeas = 22 kHz VDD = 5.0V THD+N (%) G = +100 V/V
THD+N (%)
0.0100%
0.0100%
G = +10 V/V
G = +10 V/V 0.0010% G = +1 V/V 0.0001% 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Output Voltage (VP-P)
0.0010%
G = +1 V/V
f = 20 kHz BWMeas = 80 kHz VDD = 5.0V
0.0001% 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Output Voltage (VP-P)
FIGURE 2-26: Total Harmonic Distortion plus Noise vs. Output Voltage with f = 1 kHz.
6 Input, Output Voltage (V) 5 4 3 2 1 0 -1 0 10 20 30 40 50 60 70 Time (10 s/div) 80 90 100 VOUT VIN VDD = 5.0V G = +2 V/V
FIGURE 2-29: Total Harmonic Distortion plus Noise vs. Output Voltage with f = 20 kHz.
Channel to Channel Separation (dB) 135 130 125 120 115 110 G = +1 V/V 105
1.E+03 1.E+04 1.E+05 1.E+06
1k
10k 100k Frequency (Hz)
1M
FIGURE 2-27: The MCP6021/1R/2/3/4 family shows no phase reversal under overdrive.
FIGURE 2-30: Channel-to-Channel Separation vs. Frequency (MCP6022 and MCP6024 only).
(c) 2009 Microchip Technology Inc.
DS21685D-page 11
MCP6021/1R/2/3/4
Note: Unless otherwise indicated, TA = +25C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2, VOUT VDD/2, RL = 10 k to VDD/2 and CL = 60 pF.
1,000 Output Voltage Headroom; VDD-VOH or VOL-VSS (mV) Output Voltage Headroom VDD-VOH or VOL-VSS (mV) 10 9 8 7 6 5 4 3 2 1 0 -50 -25
VOL - VSS
100
VDD - VOH
10
VOL - VSS VDD - VOH
1 0.01
0.1 1 Output Current Magnitude (mA)
10
0 25 50 75 100 Ambient Temperature (C)
125
FIGURE 2-31: Output Voltage Headroom vs. Output Current.
6.E-02
FIGURE 2-34: vs. Temperature.
6.E-02
Output Voltage Headroom
5.E-02
G = +1 V/V Output Voltage (10 mV/div)
5.E-02
Output Voltage (10 mV/div)
4.E-02
4.E-02
G = -1 V/V RF = 1 k
3.E-02
3.E-02
2.E-02
2.E-02
1.E-02
1.E-02
0.E+00
0.E+00
-1.E-02
-1.E-02
-2.E-02
-2.E-02
-3.E-02
-3.E-02
-4.E-02
-4.E-02
-5.E-02
-5.E-02
-6.E-02 0.E+00 2.E-07 4.E-07 6.E-07 8.E-07 1.E-06 1.E-06 1.E-06 2.E-06 2.E-06 2.E-06
-6.E-02 0.E+00 2.E-07 4.E-07 6.E-07 8.E-07 1.E-06 1.E-06 1.E-06 2.E-06 2.E-06 2.E-06
Time (200 ns/div)
Time (200 ns/div)
FIGURE 2-32: Pulse Response.
5.0 4.5 Output Voltage (V) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0
0.E+00 5.E-07 1.E-06 2.E-06
Small-Signal Non-inverting
FIGURE 2-35: Response.
5.0
Small-Signal Inverting Pulse
G = +1 V/V Output Voltage (V)
4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0
G = -1 V/V RF = 1 k
2.E-06
3.E-06
3.E-06
4.E-06
4.E-06
5.E-06
5.E-06
0.E+00
5.E-07
1.E-06
2.E-06
2.E-06
3.E-06
3.E-06
4.E-06
4.E-06
5.E-06
5.E-06
Time (500 ns/div)
Time (500 ns/div)
FIGURE 2-33: Pulse Response.
Large-Signal Non-inverting
FIGURE 2-36: Response.
Large-Signal Inverting Pulse
DS21685D-page 12
(c) 2009 Microchip Technology Inc.
MCP6021/1R/2/3/4
Note: Unless otherwise indicated, TA = +25C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2, VOUT VDD/2, RL = 10 k to VDD/2 and CL = 60 pF.
50 40 30 20 10 0 -10 -20 -30 -40 -50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Power Supply Voltage (V) 50 40 30 20 10 0 -10 -20 -30 -40 -50
VREF Accuracy; V REF - V DD/2 (mV)
VREF Accuracy; V REF - V DD/2 (mV)
Representative Part
VDD = 5.5V VDD = 2.5V
-50
-25
0 25 50 75 100 Ambient Temperature (C)
125
FIGURE 2-37: VREF Accuracy vs. Supply Voltage (MCP6021 and MCP6023 only).
1.6 1.4 Quiescent Current (mA/amplifier) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.5 1.0 1.5 2.0 Chip Select Voltage (V) 2.5 VDD = 2.5V G = +1 V/V VIN = 1.25V CS swept low to high CS swept high to low Hysteresis
FIGURE 2-40: VREF Accuracy vs. Temperature (MCP6021 and MCP6023 only).
1.6 Quiescent Current (mA/amplifier)
Op Amp turns on here
Op Amp shuts off here
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0
Op Amp turns on here
Op Amp shuts off here Hysteresis
CS swept high to low VDD = 5.5V G = +1 V/V VIN = 2.75V
CS swept low to high
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Chip Select Voltage (V)
FIGURE 2-38: Chip Select (CS) Hysteresis (MCP6023 only) with VDD = 2.5V.
5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -0.5
FIGURE 2-41: Chip Select (CS) Hysteresis (MCP6023 only) with VDD = 5.5V.
1.E-02 10m 1.E-03 1m 1.E-04 100 1.E-05 10 1.E-06 1 100n 1.E-07 10n 1.E-08 1n 1.E-09 100p 1.E-10 10p 1.E-11 1p 1.E-12
Chip Select Voltage, Output Voltage (V)
CS Voltage
VOUT
Input Current Magnitude (A)
VDD = 5.0V G = +1 V/V VIN = VSS
Output on
Output High-Z
Output on
+125C +85C +25C -40C
-1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0
0.0E+00 5.0E-06 1.0E-05 1.5E-05 2.0E-05 2.5E-05 3.0E-05 3.5E-05
Time (5 s/div)
Input Voltage (V)
FIGURE 2-39: Chip Select (CS) to Amplifier Output Response Time (MCP6023 only).
FIGURE 2-42: Measured Input Current vs. Input Voltage (below VSS).
(c) 2009 Microchip Technology Inc.
DS21685D-page 13
MCP6021/1R/2/3/4
NOTES:
DS21685D-page 14
(c) 2009 Microchip Technology Inc.
MCP6021/1R/2/3/4
3.0 PIN DESCRIPTIONS
Descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
MCP6021 PDIP, SOIC, MSOP, TSSOP (Note 1)
6 2 3 7 -- -- -- -- -- -- 4 -- -- -- 5 -- 1, 8 Note 1: 2:
PIN FUNCTION TABLE
MCP6021R MCP6022 MCP6023 MCP6024 SOT-23-5 (Note 2) PDIP, SOIC, TSSOP PDIP, SOIC, TSSOP PDIP, SOIC, TSSOP Symbol Description
SOT-23-5
1 4 3 5 -- -- -- -- -- -- 2 -- -- -- -- -- --
1 4 3 2 -- -- -- -- -- -- 5 -- -- -- -- -- --
1 2 3 8 5 6 7 -- -- -- 4 -- -- -- -- -- --
6 2 3 7 -- -- -- -- -- -- 4 -- -- -- 5 8 1
1 2 3 4 5 6 7 8 9 10 11 12 13 14 -- -- --
VOUT, VOUTA Analog Output (op amp A) VIN-, VINA- VIN+, VINA+ VDD VINB+ VINB- VOUTB VOUTC VINC- VINC+ VSS VIND+ VIND- VOUTD VREF CS NC Inverting Input (op amp A) Non-inverting Input (op amp A) Positive Power Supply Non-inverting Input (op amp B) Inverting Input (op amp B) Analog Output (op amp B) Analog Output (op amp C) Inverting Input (op amp C) Non-inverting Input (op amp C) Negative Power Supply Non-inverting Input (op amp D) Inverting Input (op amp D) Analog Output (op amp D) Reference Voltage Chip Select No Internal Connection
The MCP6021 in the 8-pin TSSOP package is only available for I-temp (Industrial Temperature) parts. The MCP6021R is only available in the 5-pin SOT-23 package, and for E-temp (Extended Temperature) parts.
3.1
Analog Outputs
3.4
Chip Select Digital Input (CS)
The op amp output pins are low-impedance voltage sources.
This is a CMOS, Schmitt-triggered input that places the part into a low power mode of operation.
3.2
Analog Inputs
3.5
Power Supply (VSS and VDD)
The op amp non-inverting and inverting inputs are highimpedance CMOS inputs with low bias currents.
3.3
Reference Voltage (VREF, ) MCP6021 and MCP6023
The positive power supply pin (VDD) is 2.5V to 6.0V higher than the negative power supply pin (VSS). For normal operation, the other pins are at voltages between VSS and VDD. Typically, these parts are used in a single (positive) supply configuration. In this case, VSS is connected to ground and VDD is connected to the supply. VDD will need a bypass capacitor.
Mid-supply reference voltage provided by the single op amps (except in SOT-23-5 package). This is an unbuffered, resistor voltage divider internal to the part.
(c) 2009 Microchip Technology Inc.
DS21685D-page 15
MCP6021/1R/2/3/4
NOTES:
DS21685D-page 16
(c) 2009 Microchip Technology Inc.
MCP6021/1R/2/3/4
4.0 APPLICATIONS INFORMATION
VDD D1 V1 R1 V2 R2 R3 VSS - (minimum expected V1) 2 mA VSS - (minimum expected V2) R2 > 2 mA R1 > MCP602X D2 The MCP6021/1R/2/3/4 family of operational amplifiers are fabricated on Microchip's state-of-the-art CMOS process. They are unity-gain stable and suitable for a wide range of general-purpose applications.
4.1
4.1.1
Rail-to-Rail Input
PHASE REVERSAL
The MCP6021/1R/2/3/4 op amp is designed to prevent phase reversal when the input pins exceed the supply voltages. Figure 2-42 shows the input voltage exceeding the supply voltage without any phase reversal.
4.1.2
INPUT VOLTAGE AND CURRENT LIMITS
The ESD protection on the inputs can be depicted as shown in Figure 4-1. This structure was chosen to protect the input transistors, and to minimize input bias current (IB). The input ESD diodes clamp the inputs when they try to go more than one diode drop below VSS. They also clamp any voltages that go too far above VDD; their breakdown voltage is high enough to allow normal operation, and low enough to bypass quick ESD events within the specified limits.
FIGURE 4-2: Inputs.
Protecting the Analog
It is also possible to connect the diodes to the left of resistors R1 and R2. In this case, current through the diodes D1 and D2 needs to be limited by some other mechanism. The resistors then serve as in-rush current limiters; the DC current into the input pins (VIN+ and VIN-) should be very small. A significant amount of current can flow out of the inputs when the common mode voltage (VCM) is below ground (VSS); see Figure 2-42. Applications that are high impedance may need to limit the useable voltage range.
VDD Bond Pad
VIN+ Bond Pad
Input Stage
Bond V - IN Pad
4.1.3
NORMAL OPERATION
VSS Bond Pad
The input stage of the MCP6021/1R/2/3/4 op amps use two differential CMOS input stages in parallel. One operates at low common mode input voltage (VCM), while the other operates at high VCM. WIth this topology, the device operates with Vcm up to 0.3V above VDD and 0.3V below VSS.
FIGURE 4-1: Structures.
Simplified Analog Input ESD
4.2
Rail-to-Rail Output
In order to prevent damage and/or improper operation of these op amps, the circuit they are in must limit the currents and voltages at the VIN+ and VIN- pins (see Absolute Maximum Ratings at the beginning of Section 1.0 "Electrical Characteristics"). Figure 4-2 shows the recommended approach to protecting these inputs. The internal ESD diodes prevent the input pins (VIN+ and VIN-) from going too far below ground, and the resistors R1 and R2 limit the possible current drawn out of the input pins. Diodes D1 and D2 prevent the input pins (VIN+ and VIN-) from going too far above VDD, and dump any currents onto VDD. When implemented as shown, resistors R1 and R2 also limit the current through D1 and D2.
The Maximum Output Voltage Swing is the maximum swing possible under a particular output load. According to the specification table, the output can reach within 20 mV of either supply rail when RL = 10 k. See Figure 2-31 and Figure 2-34 for more information concerning typical performance.
4.3
Capacitive Loads
Driving large capacitive loads can cause stability problems for voltage feedback op amps. As the load capacitance increases, the feedback loop's phase margin decreases, and the closed loop bandwidth is reduced. This produces gain-peaking in the frequency response, with overshoot and ringing in the step response.
(c) 2009 Microchip Technology Inc.
DS21685D-page 17
MCP6021/1R/2/3/4
When driving large capacitive loads with these op amps (e.g., > 60 pF when G = +1), a small series resistor at the output (RISO in Figure 4-3) improves the feedback loop's phase margin (stability) by making the load resistive at higher frequencies. The bandwidth will be generally lower than the bandwidth with no capacitive load. 1 V/V (unity gain). CG also reduces the phase margin of the feedback loop for both non-inverting and inverting gains.
VIN
VOUT
VIN MCP602X
RISO VOUT CL
CG
RF RG
FIGURE 4-3: Output Resistor RISO Stabilizes Large Capacitive Loads.
Figure 4-4 gives recommended RISO values for different capacitive loads and gains. The x-axis is the normalized load capacitance (CL/GN), where GN is the circuit's noise gain. For non-inverting gains, GN and the Signal Gain are equal. For inverting gains, GN is 1+|Signal Gain| (e.g., -1 V/V gives GN = +2 V/V).
1,000 Recommended RISO () GN +1
FIGURE 4-5: Non-inverting Gain Circuit with Parasitic Capacitance.
The largest value of RF in Figure 4-5 that should be used is a function of noise gain (see GN in Section 4.3 "Capacitive Loads") and CG. Figure 4-6 shows results for various conditions. Other compensation techniques may be used, but they tend to be more complicated to the design.
1.E+05 100k
GN > +1 V/V
Maximum RF ()
1.E+04 10k
CG = 7 pF CG = 20 pF
100
1k 1.E+03
CG = 50 pF CG = 100 pF
100 1.E+02
10 10 100 1,000 10,000 Normalized Capacitance; CL/GN (pF)
1 Noise Gain; GN (V/V)
10
FIGURE 4-4: Recommended RISO values for capacitive loads.
After selecting RISO for your circuit, double-check the resulting frequency response peaking and step response overshoot. Modify RISO's value until the response is reasonable. Evaluation on the bench and simulations with the MCP6021/1R/2/3/4 Spice macro model are helpful.
FIGURE 4-6: Non-inverting gain circuit with parasitic capacitance.
4.5
MCP6023 Chip Select (CS)
4.4
Gain Peaking
Figure 2-35 and Figure 2-36 use RF = 1 k to avoid (frequency response) gain peaking and (step response) overshoot. The capacitance to ground at the inverting input (CG) is the op amp's common mode input capacitance plus board parasitic capacitance. CG is in parallel with RG, which causes an increase in gain at high frequencies for non-inverting gains greater than
The MCP6023 is a single amplifier with chip select (CS). When CS is pulled high, the supply current drops to 10 nA (typical) and flows through the CS pin to VSS. When this happens, the amplifier output is put into a high-impedance state. By pulling CS low, the amplifier is enabled. The CS pin has an internal 5 M (typical) pulldown resistor connected to VSS, so it will go low if the CS pin is left floating. Figure 1-1 and Figure 2-39 show the output voltage and supply current response to a CS pulse.
DS21685D-page 18
(c) 2009 Microchip Technology Inc.
MCP6021/1R/2/3/4
4.6 MCP6021 and MCP6023 Reference Voltage
VIN RG RF VOUT
The single op amps (MCP6021 and MCP6023), not in the SOT-23-5 package, have an internal mid-supply reference voltage connected to the VREF pin (see Figure 4-7). The MCP6021 has CS internally tied to VSS, which always keeps the op amp on and always provides a mid-supply reference. With the MCP6023, taking the CS pin high conserves power by shutting down both the op amp and the VREF circuitry. Taking the CS pin low turns on the op amp and VREF circuitry. VDD 50 k VREF 50 k CS 5 M
VREF CB
FIGURE 4-9: Inverting gain circuit using VREF (MCP6021 and MCP6023 only).
If you don't need the mid-supply reference, leave the VREF pin open.
4.7
Supply Bypass
With this family of operational amplifiers, the power supply pin (VDD for single supply) should have a local bypass capacitor (i.e., 0.01 F to 0.1 F) within 2 mm for good, high-frequency performance. It also needs a bulk capacitor (i.e., 1 F or larger) within 100 mm to provide large, slow currents. This bulk capacitor can be shared with nearby analog parts.
4.8
VSS (CS tied internally to VSS for MCP6021)
Unused Op Amps
FIGURE 4-7: Simplified internal VREF circuit (MCP6021 and MCP6023 only).
See Figure 4-8 for a non-inverting gain circuit using the internal mid-supply reference. The DC-blocking capacitor (CB) also reduces noise by coupling the op amp input to the source. RG RF
An unused op amp in a quad package (MCP6024) should be configured as shown in Figure 4-10. These circuits prevent the output from toggling and causing crosstalk. Circuits A sets the op amp at its minimum noise gain. The resistor divider produces any desired reference voltage within the output voltage range of the op amp; the op amp buffers that reference voltage. Circuit B uses the minimum number of components and operates as a comparator, but it may draw more current. 1/4 MCP6024 (A) VDD 1/4 MCP6024 (B) VDD VDD VREF
VOUT CB VIN VREF
R1 R2
FIGURE 4-8: Non-inverting gain circuit using VREF (MCP6021 and MCP6023 only).
To use the internal mid-supply reference for an inverting gain circuit, connect the VREF pin to the non-inverting input, as shown in Figure 4-9. The capacitor CB helps reduce power supply noise on the output.
R2 V REF = V DD x -----------------R1 + R2
FIGURE 4-10:
Unused Op Amps.
(c) 2009 Microchip Technology Inc.
DS21685D-page 19
MCP6021/1R/2/3/4
4.9 PCB Surface Leakage
In applications where low input bias current is critical, PCB (printed circuit board) surface-leakage effects need to be considered. Surface leakage is caused by humidity, dust or other contamination on the board. Under low humidity conditions, a typical resistance between nearby traces is 1012. A 5V difference would cause 5 pA of current to flow, which is greater than the MCP6021/1R/2/3/4 family's bias current at +25C (1 pA, typical). The easiest way to reduce surface leakage is to use a guard ring around sensitive pins (or traces). The guard ring is biased at the same voltage as the sensitive pin. Figure 4-11 shows an example of this type of layout. Guard Ring VIN- VIN+ Separate digital from analog, low speed from high speed and low power from high power. This will reduce interference. Keep sensitive traces short and straight. Separating them from interfering components and traces. This is especially important for high-frequency (low rise-time) signals. Sometimes it helps to place guard traces next to victim traces. They should be on both sides of the victim trace, and as close as possible. Connect the guard trace to ground plane at both ends, and in the middle for long traces. Use coax cables (or low inductance wiring) to route signal and power to and from the PCB.
4.11
4.11.1
Typical Applications
A/D CONVERTER DRIVER AND ANTI-ALIASING FILTER
FIGURE 4-11: Layout.
1.
Example Guard Ring
Figure 4-12 shows a third-order Butterworth filter that can be used as an A/D converter driver. It has a bandwidth of 20 kHz and a reasonable step response. It will work well for conversion rates of 80 ksps and greater (it has 29 dB attenuation at 60 kHz).
2.
Non-inverting Gain and Unity-Gain Buffer. a) Connect the guard ring to the inverting input pin (VIN-); this biases the guard ring to the common mode input voltage. b) Connect the non-inverting pin (VIN+) to the input with a wire that does not touch the PCB surface. Inverting (Figure 4-11) and Transimpedance Gain Amplifiers (convert current to voltage, such as photo detectors). a) Connect the guard ring to the non-inverting input pin (VIN+). This biases the guard ring to the same reference voltage as the op amp's input (e.g., VDD/2 or ground). b) Connect the inverting pin (VIN-) to the input with a wire that does not touch the PCB surface.
1.0 nF 8.45 k 14.7 k 1.2 nF 33.2 k 100 pF MCP602X
FIGURE 4-12: A/D Converter Driver and Anti-aliasing Filter with a 20 kHz Cutoff Frequency.
This filter can easily be adjusted to another bandwidth by multiplying all capacitors by the same factor. Alternatively, the resistors can all be scaled by another common factor to adjust the bandwidth.
4.10
High Speed PCB Layout
Due to their speed capabilities, a little extra care in the PCB (Printed Circuit Board) layout can make a significant difference in the performance of these op amps. Good PC board layout techniques will help you achieve the performance shown in Section 1.0 "Electrical Characteristics" and Section 2.0 "Typical Performance Curves", while also helping you minimize EMC (Electro-Magnetic Compatibility) issues. Use a solid ground plane and connect the bypass local capacitor(s) to this plane with minimal length traces. This cuts down inductive and capacitive crosstalk.
DS21685D-page 20
(c) 2009 Microchip Technology Inc.
MCP6021/1R/2/3/4
4.11.2 OPTICAL DETECTOR AMPLIFIER
Figure 4-13 shows the MCP6021 op amp used as a transimpedance amplifier in a photo detector circuit. The photo detector looks like a capacitive current source, so the 100 k resistor gains the input signal to a reasonable level. The 5.6 pF capacitor stabilizes this circuit and produces a flat frequency response with a bandwidth of 370 kHz. 5.6 pF 100 k 100 pF MCP6021 VDD/2
Photo Detector
FIGURE 4-13: Transimpedance Amplifier for an Optical Detector.
(c) 2009 Microchip Technology Inc.
DS21685D-page 21
MCP6021/1R/2/3/4
NOTES:
DS21685D-page 22
(c) 2009 Microchip Technology Inc.
MCP6021/1R/2/3/4
5.0 DESIGN AIDS
5.5
Microchip provides the basic design tools needed for the MCP6021/1R/2/3/4 family of op amps.
Analog Demonstration and Evaluation Boards
5.1
SPICE Macro Model
The latest SPICE macro model available for the MCP6021/1R/2/3/4 op amps is on Microchip's web site at www.microchip.com. This model is intended as an initial design tool that works well in the op amp's linear region of operation at room temperature. Within the macro model file is information on its capabilities. Bench testing is a very important part of any design and cannot be replaced with simulations. Also, simulation results using this macro model need to be validated by comparing them to the data sheet specifications and characteristic curves.
Microchip offers a broad spectrum of Analog Demonstration and Evaluation Boards that are designed to help you achieve faster time to market. For a complete listing of these boards and their corresponding user's guides and technical information, visit the Microchip web site at www.microchip.com/analogtools. Some boards that are especially useful are: MCP6XXX Amplifier Evaluation Board 1 MCP6XXX Amplifier Evaluation Board 2 MCP6XXX Amplifier Evaluation Board 3 MCP6XXX Amplifier Evaluation Board 4 Active Filter Demo Board Kit 8-Pin SOIC/MSOP/TSSOP/DIP Evaluation Board, P/N: SOIC8EV * 14-Pin SOIC/TSSOP/DIP Evaluation Board, P/N: SOIC14EV * * * * * *
5.2
FilterLab(R) Software
Microchip's FilterLab(R) software is an innovative software tool that simplifies analog active filter (using op amps) design. Available at no cost from the Microchip web site at www.microchip.com/filterlab, the FilterLab design tool provides full schematic diagrams of the filter circuit with component values. It also outputs the filter circuit in SPICE format, which can be used with the macro model to simulate actual filter performance.
5.6
Application Notes
The following Microchip Application Notes are available on the Microchip web site at www.microchip. com/ appnotes and are recommended as supplemental reference resources. * ADN003: "Select the Right Operational Amplifier for your Filtering Circuits", DS21821 * AN722: "Operational Amplifier Topologies and DC Specifications", DS00722 * AN723: "Operational Amplifier AC Specifications and Applications", DS00723 * AN884: "Driving Capacitive Loads With Op Amps", DS00884 * AN990: "Analog Sensor Conditioning Circuits - An Overview", DS00990 * AN1177: "Op Amp Precision Design: DC Errors", DS01177 * AN1228: "Op Amp Precision Design: Random Noise", DS01228 These application notes and others are listed in the design guide: "Signal Chain Design Guide", DS21825
5.3
MindiTM Circuit Designer & Simulator
Microchip's MindiTM Circuit Designer & Simulator aids in the design of various circuits useful for active filter, amplifier and power-management applications. It is a free online circuit designer & simulator available from the Microchip web site at www.microchip.com/mindi. This interactive circuit designer & simulator enables designers to quickly generate circuit diagrams, simulate circuits. Circuits developed using the Mindi Circuit Designer & Simulator can be downloaded to a personal computer or workstation.
5.4
Microchip Advanced Part Selector (MAPS)
MAPS is a software tool that helps semiconductor professionals efficiently identify Microchip devices that fit a particular design requirement. Available at no cost from the Microchip web site at www.microchip.com/ maps, the MAPS is an overall selection tool for Microchip's product portfolio that includes Analog, Memory, MCUs and DSCs. Using this tool you can define a filter to sort features for a parametric search of devices and export side-by-side technical comparison reports. Helpful links are also provided for Data sheets, Purchase, and Sampling of Microchip parts.
(c) 2009 Microchip Technology Inc.
DS21685D-page 23
MCP6021/1R/2/3/4
NOTES:
DS21685D-page 24
(c) 2009 Microchip Technology Inc.
MCP6021/1R/2/3/4
6.0
6.1
PACKAGING INFORMATION
Package Marking Information
5-Lead SOT-23 (MCP6021/MCP6021R) Example: (E-temp)
Device
E-Temp Code EYNN EZNN
XXNN
MCP6021 MCP6021R
EY25
Note: Applies to 5-Lead SOT-23
8-Lead PDIP (300 mil) XXXXXXXX XXXXXNNN YYWW
Example: MCP6021 I/P256 0903 MCP6021 e3 E/P^^256 0903
OR
8-Lead SOIC (150 mil) XXXXXXXX XXXXYYWW NNN
Example: MCP6021 I/SN0903 256 MCP6021E e3 SN^^0903 256
OR
8-Lead MSOP XXXXXX YWWNNN
Example: 6021E 903256
8-Lead TSSOP
Example:
XXXX YYWW NNN
6021 E903 256
Legend: XX...X Y YY WW NNN
e3
*
Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week `01') Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package.
Note:
In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information.
(c) 2009 Microchip Technology Inc.
DS21685D-page 25
MCP6021/1R/2/3/4
Package Marking Information (Continued)
14-Lead PDIP (300 mil) (MCP6024) Example:
XXXXXXXXXXXXXX XXXXXXXXXXXXXX YYWWNNN
MCP6024-I/P XXXXXXXXXXXXXX 0903256
OR
MCP6024 E/P^^ e3 0903256
14-Lead SOIC (150 mil) (MCP6024)
Example:
XXXXXXXXXX XXXXXXXXXX YYWWNNN
MCP6024ISL XXXXXXXXXX 0903256
OR
MCP6024 e3 E/SL^^ 0903256
14-Lead TSSOP (MCP6024)
Example:
XXXXXX YYWW NNN
6024E 0903 256
DS21685D-page 26
(c) 2009 Microchip Technology Inc.
MCP6021/1R/2/3/4
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(c) 2009 Microchip Technology Inc.
DS21685D-page 27
MCP6021/1R/2/3/4
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DS21685D-page 35
MCP6021/1R/2/3/4
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DS21685D-page 36
(c) 2009 Microchip Technology Inc.
MCP6021/1R/2/3/4
APPENDIX A: REVISION HISTORY
Revision B (November 2003)
* Second Release of this Document
Revision D (February 2009)
The following is the list of modifications: 1. 2. 3. Changed all references to 6.0V back to 5.5V throughout document. Design Aids: Name change for Mindi Simulation Tool. Section 1.0 "Electrical Characteristics", DC Electrical Specifications: Corrected "Maximum Output Voltage Swing" condition from 0.9V Input Overdrive to 0.5V Input Overdrive. Section 1.0 "Electrical Characteristics", AC Electrical Specifications: Changed Phase Margin condition from G = +1 to G= +1 V/V. Section 1.0 "Electrical Characteristics", AC Electrical Specifications: Changed Settling Time, 0.2% condition from G = +1 to G = +1 V/V. Section 1.0 "Electrical Characteristics": Added Section 1.1 Test Circuits. Section 5.0 "Design AIDS": Name change for Mindi Simulation Tool. Added new boards to Section 5.5 "Analog Demonstration and Evaluation Boards" and new application notes to Section 5.6 "Application Notes". Updates Appendix A: "Revision History"
Revision A (November 2001)
* Original Release of this Document.
4.
5.
6. 7.
8.
Revision C (March 2006)
The following is the list of modifications: 1. 2. 3. 4. Added SOT-23-5 package option for single op amps MCP6021 and MCP6021R (E-temp only). Added MSOP-8 package option for E-temp single op amp (MCP6021). Corrected package drawing on front page for dual op amp (MCP6022). Clarified spec conditions (ISC, PM and THD+N) in Section 2.0 "Typical Performance Curves". Added Section 3.0 "Pin Descriptions". Updated Section 4.0 "Applications information" for THD+N, unused op amps, and gain peaking discussions. Corrected and updated package marking information in Section 6.0 "Packaging Information". Added Appendix A: "Revision History".
5. 6.
7.
8.
(c) 2009 Microchip Technology Inc.
DS21685D-page 37
MCP6021/1R/2/3/4
NOTES:
DS21685D-page 38
(c) 2009 Microchip Technology Inc.
MCP6021/1R/2/3/4
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. Device X Temperature Range /XX Package
b) Device: MCP6021 MCP6021T Single Op Amp Single Op Amp (Tape and Reel for SOT-23, SOIC, TSSOP, MSOP) MCP6021R Single Op Amp MCP6021RT Single Op Amp (Tape and Reel for SOT-23) MCP6022 Dual Op Amp MCP6022T Dual Op Amp (Tape and Reel for SOIC and TSSOP) MCP6023 Single Op Amp w/ CS MCP6023T Single Op Amp w/ CS (Tape and Reel for SOIC and TSSOP) MCP6024 Quad Op Amp MCP6024T Quad Op Amp (Tape and Reel for SOIC and TSSOP) c) a)
Examples:
a) MCP6021T-E/OT: Tape and Reel, Extended temperature, 5LD SOT-23. MCP6021-E/P: Extended temperature, 8LD PDIP. MCP6021-E/SN: Extended temperature, 8LD SOIC. MCP6021RT-E/OT:Tape and Reel, Extended temperature, 5LD SOT-23. MCP6022-I/P: Industrial temperature, 8LD PDIP. MCP6022-E/P: Extended temperature, 8LD PDIP. MCP6022T-E/ST: Tape and Reel, Extended temperature, 8LD TSSOP. Industrial temperature, 8LD PDIP. MCP6023-E/P: Extended temperature, 8LD PDIP. MCP6023-E/SN: Extended temperature, 8LD SOIC.
a) b) c)
a) b)
MCP6023-I/P:
Temperature Range:
I E
= -40C to +85C = -40C to +125C
c) a) b) c)
Package:
OT = Plastic Small Outline Transistor (SOT-23), 5-lead (MCP6021, E-Temp; MCP6021R, E-Temp) MS = Plastic MSOP, 8-lead (MCP6021, E-Temp) P = Plastic DIP (300 mil Body), 8-lead, 14-lead SN = Plastic SOIC (150mil Body), 8-lead SL = Plastic SOIC (150 mil Body), 14-lead ST = Plastic TSSOP, 8-lead (MCP6021,I-Temp; MCP6022, I-Temp, E-Temp; MCP6023, I-Temp, E-Temp;) ST = Plastic TSSOP, 14-lead
MCP6024-I/SL:
Industrial temperature, 14LD SOIC. MCP6024-E/SL: Extended temperature, 14LD SOIC. MCP6024T-E/ST: Tape and Reel, Extended temperature, 14LD TSSOP.
(c) 2009 Microchip Technology Inc.
DS21685D-page 39
MCP6021/1R/2/3/4
NOTES:
DS21685D-page 40
(c) 2009 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices: * * Microchip products meet the specification contained in their particular Microchip Data Sheet. Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. Microchip is willing to work with the customer who is concerned about the integrity of their code. Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as "unbreakable."
*
* *
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip's code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer's risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights.
Trademarks The Microchip name and logo, the Microchip logo, Accuron, dsPIC, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, rfPIC, SmartShunt and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, Linear Active Thermistor, MXDEV, MXLAB, SEEVAL, SmartSensor and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, In-Circuit Serial Programming, ICSP, ICEPIC, Mindi, MiWi, MPASM, MPLAB Certified logo, MPLIB, MPLINK, mTouch, PICkit, PICDEM, PICDEM.net, PICtail, PIC32 logo, PowerCal, PowerInfo, PowerMate, PowerTool, REAL ICE, rfLAB, Select Mode, Total Endurance, WiperLock and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. (c) 2009, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper.
Microchip received ISO/TS-16949:2002 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company's quality system processes and procedures are for its PIC(R) MCUs and dsPIC(R) DSCs, KEELOQ(R) code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip's quality system for the design and manufacture of development systems is ISO 9001:2000 certified.
(c) 2009 Microchip Technology Inc.
DS21685D-page 41
Worldwide Sales and Service
AMERICAS
Corporate Office 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: http://support.microchip.com Web Address: www.microchip.com Atlanta Duluth, GA Tel: 678-957-9614 Fax: 678-957-1455 Boston Westborough, MA Tel: 774-760-0087 Fax: 774-760-0088 Chicago Itasca, IL Tel: 630-285-0071 Fax: 630-285-0075 Cleveland Independence, OH Tel: 216-447-0464 Fax: 216-447-0643 Dallas Addison, TX Tel: 972-818-7423 Fax: 972-818-2924 Detroit Farmington Hills, MI Tel: 248-538-2250 Fax: 248-538-2260 Kokomo Kokomo, IN Tel: 765-864-8360 Fax: 765-864-8387 Los Angeles Mission Viejo, CA Tel: 949-462-9523 Fax: 949-462-9608 Santa Clara Santa Clara, CA Tel: 408-961-6444 Fax: 408-961-6445 Toronto Mississauga, Ontario, Canada Tel: 905-673-0699 Fax: 905-673-6509
ASIA/PACIFIC
Asia Pacific Office Suites 3707-14, 37th Floor Tower 6, The Gateway Harbour City, Kowloon Hong Kong Tel: 852-2401-1200 Fax: 852-2401-3431 Australia - Sydney Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 China - Beijing Tel: 86-10-8528-2100 Fax: 86-10-8528-2104 China - Chengdu Tel: 86-28-8665-5511 Fax: 86-28-8665-7889 China - Hong Kong SAR Tel: 852-2401-1200 Fax: 852-2401-3431 China - Nanjing Tel: 86-25-8473-2460 Fax: 86-25-8473-2470 China - Qingdao Tel: 86-532-8502-7355 Fax: 86-532-8502-7205 China - Shanghai Tel: 86-21-5407-5533 Fax: 86-21-5407-5066 China - Shenyang Tel: 86-24-2334-2829 Fax: 86-24-2334-2393 China - Shenzhen Tel: 86-755-8203-2660 Fax: 86-755-8203-1760 China - Wuhan Tel: 86-27-5980-5300 Fax: 86-27-5980-5118 China - Xiamen Tel: 86-592-2388138 Fax: 86-592-2388130 China - Xian Tel: 86-29-8833-7252 Fax: 86-29-8833-7256 China - Zhuhai Tel: 86-756-3210040 Fax: 86-756-3210049
ASIA/PACIFIC
India - Bangalore Tel: 91-80-3090-4444 Fax: 91-80-3090-4080 India - New Delhi Tel: 91-11-4160-8631 Fax: 91-11-4160-8632 India - Pune Tel: 91-20-2566-1512 Fax: 91-20-2566-1513 Japan - Yokohama Tel: 81-45-471- 6166 Fax: 81-45-471-6122 Korea - Daegu Tel: 82-53-744-4301 Fax: 82-53-744-4302 Korea - Seoul Tel: 82-2-554-7200 Fax: 82-2-558-5932 or 82-2-558-5934 Malaysia - Kuala Lumpur Tel: 60-3-6201-9857 Fax: 60-3-6201-9859 Malaysia - Penang Tel: 60-4-227-8870 Fax: 60-4-227-4068 Philippines - Manila Tel: 63-2-634-9065 Fax: 63-2-634-9069 Singapore Tel: 65-6334-8870 Fax: 65-6334-8850 Taiwan - Hsin Chu Tel: 886-3-572-9526 Fax: 886-3-572-6459 Taiwan - Kaohsiung Tel: 886-7-536-4818 Fax: 886-7-536-4803 Taiwan - Taipei Tel: 886-2-2500-6610 Fax: 886-2-2508-0102 Thailand - Bangkok Tel: 66-2-694-1351 Fax: 66-2-694-1350
EUROPE
Austria - Wels Tel: 43-7242-2244-39 Fax: 43-7242-2244-393 Denmark - Copenhagen Tel: 45-4450-2828 Fax: 45-4485-2829 France - Paris Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 Germany - Munich Tel: 49-89-627-144-0 Fax: 49-89-627-144-44 Italy - Milan Tel: 39-0331-742611 Fax: 39-0331-466781 Netherlands - Drunen Tel: 31-416-690399 Fax: 31-416-690340 Spain - Madrid Tel: 34-91-708-08-90 Fax: 34-91-708-08-91 UK - Wokingham Tel: 44-118-921-5869 Fax: 44-118-921-5820
02/04/09
DS21685D-page 42
(c) 2009 Microchip Technology Inc.


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