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SID9575
Elektronische Bauelemente -15 A, -60 V, RDS(ON) 90 m P-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of "-C" specifies halogen-free
DESCRIPTION
The SID9575 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-251) is available for low-profile applications and suited for low voltage applications such as DC / DC converters.
FEATURES
Simple Drive Requirement Lower On-resistance Fast Switching Characteristic
PACKAGE DIMENSIONS MARKING:
9575
G REF. A B C D E F
D
S
Date Code
REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF 0.60 0.90
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V 1 Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction & Storage temperature
Symbol
VDS VGS ID @ TC = 25C ID @ TC = 100C IDM PD @ TC = 25C TJ, TSTG
Ratings
-60 25 -15 -9.5 -45 36 0.29 -55~150
Unit
V V A A A W W / C C
THERMAL DATA
Parameter
Thermal Resistance Junction-case Thermal Resistance Junction-ambient
Symbol
RJC RJA
Value
3.5 110
Unit
C / W C / W
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-June-2004 Rev. A
Page 1 of 4
SID9575
Elektronische Bauelemente -15 A, -60 V, RDS(ON) 90 m P-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Forward Trans-conductance Gate-Source Leakage Current Drain-Source Leakage Current (TJ=25) Drain-Source Leakage Current (TJ=150) Static Drain-Source On-Resistance Total Gate Charge
2 2
Symbol
BVDSS BVDSS / TJ VGS(th) gfs IGSS IDSS
Min
-60 -1.0 -
Typ
-0.06 14 17 5 6 10 19 46 53 1660 160 100
Max Unit
-3.0 100 -1 -25 90 120 27 2660 pF nS nC V
Test Conditions
VGS = 0, ID = -250 uA
V / C Reference to 25C, ID = -1 mA V S nA uA VDS=VGS, ID= -250 uA VDS = -10V, ID = -9A VGS = 25V VDS = -60 V, VGS = 0 VDS = -48 V, VGS = 0 VGS = -10 V, ID = -12A VGS = -4.5 V, ID = -9 A ID = -9 A VDS = -48 V VGS = -4.5 V
RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
m
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
VDS = -30 V ID = -9 A VGS = -10 V RG = 3.3 RD = 3.3
VGS = 0 V VDS = -25 V f = 1.0 MHz
SOURCE-DRAIN DIODE
Parameter
Forward On Voltage
2 2
Symbol
VSD Trr Qrr
Min
-
Typ
56 159
Max Unit
-1.2 V ns nC
Test Conditions
IS = -9A, VGS = 0 V IS = -9 A, VGS = 0V dl/dt = 100 A / uS
Reverse Recovery Time
Reverse Recovery Charge Notes: 2. Pulse width300us, duty cycle2%.
1. Pulse width limited by safe operating area.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-June-2004 Rev. A
Page 2 of 4
SID9575
Elektronische Bauelemente -15 A, -60 V, RDS(ON) 90 m P-Channel Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-June-2004 Rev. A
Page 3 of 4
SID9575
Elektronische Bauelemente -15 A, -60 V, RDS(ON) 90 m P-Channel Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES (Cont'd)
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-June-2004 Rev. A
Page 4 of 4

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