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| SID9435 Elektronische Bauelemente -20A, -30V,RDS(ON)50m [ P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SID9435 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The TO-251 is universally used for commercial-industrial applications. 5.60.2 6.60.2 5.30.2 TO-251 2.30.1 0.50.05 7.00.2 1.20.3 0.750.15 7.00.2 Features * Low Gate Charge 0.60.1 2.3REF. 0.50.1 * Simple Drive Requirement * Fast Switching G D S Dimensions in millimeters D G Marking Code: 9435 XXXX(Date Code) S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Symbol VDS VGS ID@TC=25 C ID@TC=100 C IDM PD@TC= 25oC o o Ratings -30 20 -20 -13 -72 31 0.25 Unit V V A A A W W/ C o o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Symbol Max. Max. Rthj-c Rthj-a Ratings 4.0 110 o o Unit C /W C /W ttp://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SID9435 Elektronische Bauelemente -20A, -30V,RDS(ON)50m [ P-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C ) Drain-Source Leakage Current(Tj=150C) Static Drain-Source On-Resistance 2 o o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. - 30 _ Typ. _ - 0.1 _ _ _ _ _ _ Max. _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=-250uA Reference to 25 C, ID=-1mA VDS=VGS, ID=-250uA VGS=20V VDS=-30V,VGS=0 VDS=-24V,VGS=0 VGS=-10V, ID=-10A VGS=-4.5V, ID=-5 A o _ -1.0 _ _ _ _ -3.0 100 -1 -25 50 90 16 _ _ RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ _ m [ Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance 10 3 5 9.6 18 19 14 463 187 140 9.6 nC ID=-10A VDS=-24V VGS=-4.5V _ _ _ _ VDD=-15V ID=-10A nS VGS=-10 V RG=3.3 [ RD=1.5[ 740 _ _ pF VGS=0V VDS=25V f=1.0MHz _ _ S VDS=-10V, ID=-6 A Source-Drain Diode Parameter Forward On Voltage 2 Reverse Recovery Time Reverse Recovery Change Symbol VSD Trr Min. _ _ Typ. _ Max. -1.2 _ _ Unit V nS nC Test Condition IS=-10A, VGS=0V. IS=-10A, VGS=0V. dl/dt=100A/us 34 30 Qrr _ Notes: 1.Pulse width limited by Max. junction temperature. 300us, dutycycleO2%. 2.Pulse widthO ttp://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SID9435 Elektronische Bauelemente -20A, -30V,RDS(ON)50m [ P-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode ttp://www.SeCoSGmbH.com/ Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 SID9435 Elektronische Bauelemente -20A, -30V,RDS(ON)50m [ P-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform ttp://www.SeCoSGmbH.com/ Fig 12. Gate Charge Waveform Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 |
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