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ACST12 Transient protected AC power switch Features OUT Triac with overvoltage crowbar technology Low IGT (<10 mA) or high immunity (IGT<35 mA) version High noise immunity: static dV/dt > 2000 V/s OUT G G OUT COM Benefits COM Enables equipment to meet IEC 61000-4-5 High off-state reliability with planar technology Need no external over voltage protection Reduces the power passive component count High immunity against fast transients described in IEC 61000-4-4 standards TO-220AB ACST12-7xT DPAK ACST12-7xG Figure 1. Functional diagram OUT Applications AC mains static switching in appliance and industrial control systems Drive of medium power AC loads like: - Universal drum motor of washing machine - Compressor for fridge or air conditioner Table 1. Symbol G COM Description The ACST12 series belongs to the ACS/ACST family built with the ASD (application specific discrete) technology. This high performance device is adapted to home appliances or industrial systems and drives loads up to 12 A. This ACST12 switch embeds a TRIAC structure and a high voltage clamping device able to absorb the inductive turn-off energy and withstand line transients such as those described in the IEC 61000-4-5 standards. The ACST12-7S needs a low gate current to be activated (IGT < 10 mA) and in the mean time provides a high electrical noise immunity such as those described in the IEC 61000-4-4 standards. The ACST12-7C offers an extremely high static dV/dt immunity of 2 kV/s minimum. Device summary Value 12 700 10 or 35 Unit A V mA IT(RMS) VDRM/VRRM IGT December 2008 Rev 1 1/12 www.st.com Characteristics ACST12 1 Table 2. Symbol Characteristics Absolute ratings (limiting values) Parameter TO-220AB DPAK DPAK with 1cm of Cu Value Tc = 104 C Tamb = 47 C tp = 16.7 ms tp = 20.0 ms tp = 10 ms F = 120 Hz Tj = 125 C Tj = 125 C Tj = 125 C Tj = 125 C Tj = 125 C 12 Unit IT(RMS) On-state rms current full sine wave A 2 126 120 95 100 2 0.1 10 1 - 40 to + 150 - 40 to + 125 A A A2s A/s kV W W A C C ITSM I2t dI/dt VPP PG(AV) PGM IGM Tstg Tj Non repetitive surge peak on-state current Tj initial = 25 C,( full cycle sine wave) I2t for fuse selection F = 60 Hz F = 50 Hz Critical rate of rise on-state current IG = 2 x IGT, (tr 100 ns) Non repetitive line peak pulse voltage (1) Average gate power dissipation Peak gate power dissipation (tp = 20 s) Peak gate current (tp = 20 s) Storage temperature range Operating junction temperature range 1. According to test described in IEC 61000-4-5 standard and Figure 19 Table 3. Symbol IGT(1) VGT VGD IH(2) IL Electrical characteristics Value Test conditions VOUT = 12 V, RL = 33 VOUT = 12 V, RL = 33 VOUT = VDRM, RL = 3.3 IOUT = 500 mA IG = 1.2 x IGT I - II - III Quadrant I - II - III I - II - III I - II - III Tj ACST12-7Sx 25 C 25 C 125 C 25 C 25 C 125 C 125 C Without snubber MIN. 25 C 850 14 V ICL = 0.1 mA, tp = 1 ms MAX. MAX. MIN. MAX. MAX. MIN. MIN. 30 50 200 5.3 A/ms 10 1.0 0.2 50 70 2000 ACST12-7Cx 35 Unit mA V V mA mA V/s Unit dV/dt(2) VOUT = 67% VDRM, gate open (dI/dt)c(2) VCL (dV/dt)c = 15 V/s 1. Minimum IGT is guaranteed at 5% of IGT max 2. For both polarities of OUT pin referenced to COM pin 2/12 ACST12 Table 4. Symbol VTM(1) VT0(1) Rd(1) IDRM IRRM IOUT = 17 A, tp = 500 s Threshold voltage Dynamic resistance VOUT = VDRM/ VRRM Characteristics Static characteristics Test conditions Tj = 25 C Tj = 125 C Tj = 125 C Tj = 25 C Tj = 125 C MAX. MAX. MAX. MAX. 1.5 mA Value 1.5 0.9 30 20 Unit V V m A 1. For both polarities of OUT pin referenced to COM pin Table 5. Symbol Rth(j-c) Thermal characteristics Parameter TO-220AB Junction to case (AC) DPAK TO-220AB 60 45 Junction to ambient DPAK with 1cm of Cu C/W 1.5 C/W C/W Value Unit C/W Rth(j-a) Figure 2. P(W) Maximum power dissipation vs. on-state rms current (full cycle) Figure 3. IT(RMS) (A) 13 12 11 10 9 8 7 6 5 4 3 2 1 0 On-state rms current vs. case temperature (full cycle) 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 =180 IT(RMS)(A) TC(C) 1 2 3 4 5 6 7 8 9 10 11 12 0 25 50 75 100 125 Figure 4. On-state rms current vs. ambient Figure 5. temperature (free air convection full cycle) 1.0E+00 D2PAK With 1cm2 of cu Relative variation of thermal impedance vs. pulse duration 3.0 2.5 2.0 IT(RMS)(A) K=[Zth/Rth] Z th(j-c) Zth(j-a) TO-220AB 1.5 1.0 0.5 Tamb(C) 1.0E-01 tp(s) 0.0 0 25 50 75 100 125 1.0E-02 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 3/12 Characteristics ACST12 Figure 6. On-state characteristics (maximum values) Figure 7. Non repetitive surge peak on-state current vs. number of cycles (Tj initial = 25 C) ITM (A) 1000 130 120 110 100 ITSM(A) t=20ms 100 90 80 70 60 50 Non repetitive Tj initial=25 C One cycle 10 40 30 Tj max : Vto = 0.90 V Rd = 30 m 20 10 0 5 Tj=125 C Tj=25 C Repetitive TC=104 C Number of cycles 10 100 1000 VTM (V) 2 3 4 1 0 1 1 Figure 8. Non repetitive surge peak on-state Figure 9. current for a sinusoidal pulse and corresponding value of It 2 2 Relative variation of gate triggering current (IGT) and voltage (VGT) vs. junction temperature (typical value) 10000 ITSM(A), I t (A s) dI/dt limitation: 100 A/s Tj initial=25 C IGT, VGT[Tj] / IGT, VGT[Tj = 25 C] 3.0 2.5 IGT Q3 1000 ITSM 2.0 IGT Q1-Q2 100 It 1.5 1.0 VGT Q1-Q2-Q3 10 0.5 1 0.01 tP(ms) 0.10 1.00 10.00 T j(C) 0.0 -50 -25 0 25 50 75 100 125 Figure 10. Relative variation of holding Figure 11. Relative variation of critical rate of current (IH) and latching current (IL) decrease of main current (di/dt)c vs. junction temperature vs. (dV/dt)c 2.5 IH,IL[Tj]/IH, IL[Tj = 25 C] 1.6 1.4 (di/dt)c[(dV/dt)c] / Specified(di/dt)c 2.0 1.2 ACST12-7Cxx 1.5 1.0 Typical values 1.0 IL 0.8 0.6 0.4 0.2 0.0 0.1 (dV/dt)c (V/s) 1 10 100 ACST12-7Sxx 0.5 IH 0.0 -50 -25 0 25 50 75 Tj (C) 100 125 4/12 ACST12 Characteristics Figure 12. Relative variation of critical rate of decrease of main current vs. junction temperature (dI/dt)c[Tj] / (dI/dt)c[Tj=125C] 11 10 9 8 7 6 5 4 3 2 1 0 25 50 75 100 125 Tj(C) Figure 13. Relative variation of static dV/dt immunity vs. junction temperature 12 11 10 9 8 7 6 5 4 3 2 1 Tj(C) 0 25 50 75 100 125 dV/dt[Tj] / dV/dt[Tj=125C] VD=VR=400 V Figure 14. Relative variation of maximum clamping voltage, VCL vs. junction temperature 1.15 Figure 15. Variation of thermal resistance junction to ambient vs. copper surface under tab Rth(j-a)(C/W) 80 70 60 VCL[TJ/VCL[TJ = 25 C] 1.10 Epoxy printed circuit board FR4, copper thickness = 35 m DPAK 1.05 50 1.00 40 0.95 Minimum values 30 20 0.90 10 TJ(C) 0.85 -50 -25 0 25 50 75 100 125 0 0 5 10 15 SCU(cm) 20 5/12 Application information ACST12 2 2.1 Application information Typical application description The ACST12 device has been designed to control medium power load, such as AC motors in home appliances. Thanks to its thermal and turn off commutation performances, the ACST12 switch is able to drive, with no turn off additional snubber, an inductive load up to 12 A. It also provides high thermal performances in static and transient modes such as the compressor inrush current or high torque operating conditions of an AC motor. Thanks to its low gate triggering current level, the ACST12-7S can be driven directly by a MCU through a simple gate resistor as shown in Figure 16. Figure 16. Compressor control - typical diagram Compressor Compressor AC Mains PTC AC Mains PTC ACST ACST 2 1 3 Electronic starter logical circuitry Start switch Run switch ACST ACST Electronic thermostat Rg Gate Driver Rg Power supply Gate Driver Rg Power supply 6/12 ACST12 Figure 17. Universal drum motor control - typical diagram Universal motor Application information Stator Rotor 12V AC Mains Motor direction setting MCU Speed motor regulation ACST Rg Vcc MCU 2.2 AC line transient voltage ruggedness In comparison with standard TRIACs, which are not robust against surge voltage, the ACST12 is self-protected against over-voltage, specified by the new parameter VCL. The ACST12 switch can safely withstand AC line transient voltages either by clamping the low energy spikes or by switching to the on state (for less than 10 ms) to dissipate higher energy shocks through the load. This safety feature works even with high turn-on current rises. The test circuit of Figure 18 represents the ACST12 application, and is used to stress the ACST switch according to the IEC 61000-4-5 standard conditions. Thanks to the load which is limiting the current, the ACST switch withstands the voltage spikes up to 2 kV above the peak line voltage. The protection is based on an overvoltage crowbar technology. The ACST12 switches safely to the on state as shown in Figure 19. The ACST12 recovers its blocking voltage capability after the surge. Such a non repetitive test can be done at least 10 times on each AC line voltage polarity. 7/12 Ordering information scheme ACST12 Figure 18. Overvoltage ruggedness test circuit Figure 19. Typical current and voltage for resistive and inductive loads for waveforms across the ACST12 IEC 61000-4-5 standards during IEC 61000-4-5 standard test R = 5 , L = 2 H, Vsurge = 2 kV Surge generator 2kV surge VPEAK = V CL VOUT Model of the load Rgene Filtering unit R L ACST12 IOUT L AC Mains C Rg 3 Ordering information scheme Figure 20. Ordering information scheme ACST 12 - 7 S G AC switch series On-state rms current 12 = 12 ARMS Repetitive peak off-state voltage 7 = 700 V Sensitivity S = 10 mA C = 35 mA Package G = DPAK T = TO-220AB Packing TR = Tape and reel Blank : Tube -TR 8/12 ACST12 Package information 4 Package information Epoxy meets UL94, V0 Recommende torque: 0.4 to 0.6 N*m In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at www.st.com. Table 6. TO-220AB dimensions Dimensions Ref. Millimeters Min. A C H2 Dia L5 L7 L6 L2 F2 F1 L9 L4 F G1 G M E D C A Inches Min. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.393 Max. 0.181 0.051 0.107 0.027 0.034 0.066 0.066 0.202 0.106 0.409 Max. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10 D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. 16.4 typ. 13 2.65 15.25 6.20 3.50 14 2.95 15.75 6.60 3.93 0.645 typ. 0.511 0.104 0.600 0.244 0.137 0.551 0.116 0.620 0.259 0.154 2.6 typ. 3.75 3.85 0.102 typ. 0.147 0.151 9/12 Package information Table 7. D2PAK dimensions Dimensions Ref. Millimeters Min. A A E L2 C2 ACST12 Inches Min. 0.169 0.098 0.001 0.027 0.048 0.055 Typ. Max. 0.181 0.106 0.009 0.037 Typ. Max. 4.60 2.69 0.23 0.93 4.30 2.49 0.03 0.70 1.25 0.45 1.21 8.95 10.00 4.88 15.00 1.27 1.40 0.40 0 1.40 A1 A2 B D L L3 A1 B2 C C2 0.60 1.36 9.35 0.017 0.047 0.352 0.024 0.054 0.368 0.405 0.208 0.624 0.055 0.069 0.016 B2 B G C R D E 10.28 0.393 5.28 0.192 A2 2mm min. FLAT ZONE G L V2 15.85 0.590 1.40 1.75 0.050 0.055 L2 L3 R V2 8 0 8 Figure 21. Footprint (dimensions in mm) 16.90 10.30 1.30 5.08 8.90 3.70 10/12 ACST12 Ordering information 5 Ordering information Table 8. Ordering information Marking Package TO-220AB ACST127C D PAK D2 PAK 2 Order code ACST12-7CT ACST12-7CG ACST12-7CG-TR ACST12-7ST ACST12-7SG ACST12-7SG-TR Weight 2.3 g 1.5 g 1.5 g 2.3 g 1.5 g 1.5 g Base qty 50 50 1000 50 50 1000 Packing mode Tube Tube Tape and reel Tube Tube Tape and reel TO-220AB ACST127S D2 PAK D2PAK 6 Revision history Table 9. Date 02-Dec-2008 Document revision history Revision 1 First issue Changes 11/12 ACST12 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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