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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD762 2SD762A
DESCRIPTION *With TO-220C package *Wide area of safe operation APPLICATIONS *For audio freuqency power amplifier applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
*
Absolute maximum ratings(Tc=25)
SYMBOL PARAMETER 2SD762 VCBO Collector-base voltage 2SD762A 2SD762 VCEO Collector-emitter voltage 2SD762A VEBO IC ICM IB
B
CONDITIONS
VALUE 60
UNIT
Open emitter 80 60 Open base 80 Open collector 8 4 6 1 TC=25 30 150 -55~150
V
V
Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature
V A A A W
PC Tj Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER 2SD762 VCEO(SUS) Collector-emitter sustaining voltage 2SD762A VCEsat VBE ICBO IEBO hFE-1 hFE-2 Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain IC=2 A;IB=0.4 A
B
2SD762 2SD762A
CONDITIONS
MIN 60
TYP.
MAX
UNIT
IC=0.2A; L=25mH 80 1.0 1.2 30 1 40 30 160
V
V V A mA
IC=1A ; VCE=3V VCB=50V; IE=0 VEB=8V; IC=0 IC=0.1A ; VCE=3V IC=1A ; VCE=3V
hFE-2 classifications Q 30-60 P 50-100 O 80-160
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD762 2SD762A
Fig.2 Outline dimensions (unindicated tolerance:0.10 mm)
3

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