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| PROTECTION PRODUCTS - RailClamp(R) Description RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The SRDA series has been specifically designed to protect sensitive components which are connected to data and transmission lines from overvoltage caused by electrostatic discharge (ESD), electrical fast transients (EFT), and lightning. The unique design incorporates surge rated, low capacitance steering diodes and a TVS diode in a single package. During transient conditions, the steering diodes direct the transient current to ground via the internal low voltage TVS. The TVS diode clamps the transient voltage to a safe level. The low capacitance array configuration allows the user to protect up to four high-speed data lines. The SRDA3.3-4 is constructed using Semtech's proprietary EPD process technology. The EPD process provides low stand-off voltages with significant reductions in leakage current and capacitance over siliconavalanche diode processes. They feature a true operating voltage of 3.3 volts for superior protection. These devices are in a 8-pin SOIC package. It measures 3.9 x 4.9mm. They are available with a SnPb or RoHS/WEEE compliant matte tin lead finish. The high surge capability (Ipp=25A, tp=8/20s) means it can be used in high threat environments in applications such as CO/CPE equipment, telecommunication lines, and video lines. RailClamp(R) Low Capacitance TVS Array Features Transient protection for high-speed data lines to IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact) IEC 61000-4-4 (EFT) 40A (5/50ns) IEC 61000-4-5 (Lightning) 24A (8/20s) Array of surge rated diodes with internal TVS diode Protects four I/O lines Low capacitance (<15pF) for high-speed interfaces Low operating voltage: 3.3V Low clamping voltage Solid-state technology SRDA3.3-4 Mechanical Characteristics JEDEC SOIC-8 package Lead Finish: SnPb or Matte Sn Molding compound flammability rating: UL 94V-0 Marking : Part number, date code, logo Packaging : Tape and Reel per EIA 481 Applications T1/E1 secondary IC Side Protection T3/E3 secondary IC Side Protection Analog Video Protection Microcontroller Input Protection Base stations I2C Bus Protection Circuit Diagram Schematic and PIN Configuration 2, 3 I/O 1 1 8 GND I/O 1 I/O 2 I/O 3 I/O 4 NC 2 7 I/O 4 NC 5, 8 3 6 I/O 3 I/O 2 4 5 GND S0-8 (Top View) Revision 01/15/08 www.semtech.com 1 SRDA3.3-4 PROTECTION PRODUCTS Absolute Maximum Rating R ating Peak Pulse Power (tp = 8/20s) Peak Pulse Current (tp = 8/20s) Lead Soldering Temp erature Op erating Temp erature Storage Temp erature Symbol Pp k IP P TL TJ TSTG Value 500 25 260 (10 sec.) -40 to +85 -55 to +150 Units Watts A C C C Electrical Characteristics (T=25oC) SR DA3.3-4 Parameter Reverse Stand-Off Voltage Punch-Through Voltage Snap -Back Voltage Reverse Leakage Current Clamp ing Voltage Clamp ing Voltage Clamp ing Voltage Junction Cap acitance Symbol VRWM V PT VSB IR VC VC VC Cj IPT = 2A ISB = 50mA VRWM = 3.3V, T=25C IPP = 1A, tp = 8/20s IPP = 10A, tp = 8/20s IPP = 25A, tp = 8/20s Between I/O p ins and Ground VR = 0V, f = 1MHz Between I/O p ins VR = 0V, f = 1MHz 8 3.5 2.8 1 5.3 10 15 15 Conditions Minimum Typical Maximum 3.3 Units V V V A V V V pF 4 pF (c) 2008 Semtech Corp. 2 www.semtech.com SRDA3.3-4 PROTECTION PRODUCTS Typical Characteristics Non-Repetitive Peak Pulse Power vs. Pulse Time 10 Peak Pulse Power - Ppk (kW) Power Derating Curve 110 100 % of Rated Power or PP I 90 80 70 60 50 40 30 20 10 1 0.1 0.01 0.1 1 10 Pulse Duration - tp (s) 100 1000 0 0 25 50 75 100 125 150 Ambient Temperature - TA (oC) Pulse Waveform 110 100 90 80 Percent of I PP 70 60 50 40 30 20 10 0 0 5 10 15 Time (s) 20 25 30 td = I PP/2 e-t Waveform Parameters: tr = 8s td = 20s Clamping Voltage vs. Peak Pulse Current 20 18 Clamping Voltage - Vc (V) 16 14 12 10 8 6 4 2 0 0 5 10 15 20 25 Peak Pulse Current - Ipp (A) Waveform Parameters: tr = 8 s td = 20s Normalized Junction Capacitance vs. Reverse Voltage 1.04 1.02 1 Cj (VR) / Cj (VR=0) 0.98 0.96 0.94 0.92 0.9 0.88 0 0.5 1 1.5 2 2.5 3 3.5 Reverse Voltage - VR (V) (c) 2008 Semtech Corp. 3 www.semtech.com SRDA3.3-4 PROTECTION PRODUCTS Applications Information Device Connection Options for Protection of Four High-Speed Data Lines These devices are designed to protect low voltage data lines operating at 3.3 volts. When the voltage on the protected line exceeds the punch-through or "turn-on" voltage of the TVS diode, the steering diodes are forward biased, conducting the transient current away from the sensitive circuitry. Data lines are connected at pins 1, 4, 6 and 7. Pins 5 and 8 should be connected directly to a ground plane. The path length is kept as short as possible to minimize parasitic inductance. Note that pins 2 and 3 are connected internally to the cathode of the low voltage TVS. It is not recommended that these pins be directly connected to a DC source greater than the snap-back votlage (VSB) as the device can latch on as described below. EPD TVS Characteristics These devices are constructed using Semtech's proprietary EPD technology. By utilizing the EPD technology, the SRDA3.3-4 can effectively operate at 3.3V while maintaining excellent electrical characteristics. The EPD TVS employs a complex nppn structure in contrast to the pn structure normally found in traditional silicon-avalanche TVS diodes. Since the EPD TVS devices use a 4-layer structure, they exhibit a slightly different IV characteristic curve when compared to conventional devices. During normal operation, the device represents a high-impedance to the circuit up to the device working voltage (VRWM). During an ESD event, the device will begin to conduct and will enter a low impedance state when the punch through voltage (VPT) is exceeded. Unlike a conventional device, the low voltage TVS will exhibit a slight negative resistance characteristic as it conducts current. This characteristic aids in lowering the clamping voltage of the device, but must be considered in applications where DC voltages are present. When the TVS is conducting current, it will exhibit a slight "snap-back" or negative resistance characteristics due to its structure. This point is defined on the curve by the snap-back voltage (VSB) and snap-back (c) 2008 Semtech Corp. 4 Data Line Protection Using Internal TVS Diode as Reference EPD TVS IV Characteristic Curve IPP ISB IPT VBRR IR VRWM V V VC SB PT IBRR current (ISB). To return to a non-conducting state, the current through the device must fall below the ISB (approximately <50mA) and the voltage must fall below the VSB (normally 2.8 volts for a 3.3V device). If a 3.3V TVS is connected to 3.3V DC source, it will never fall below the snap-back voltage of 2.8V and will therefore stay in a conducting state. www.semtech.com SRDA3.3-4 PROTECTION PRODUCTS Typical Applications LC01-6 8 5 1 4 SRDA3.3-4 LC01-6 T1/E1 Interface Protection (GR-1089 Long Haul) (c) 2008 Semtech Corp. 5 www.semtech.com SRDA3.3-4 PROTECTION PRODUCTS Applications Information - Spice Model Pin 2 & 3 Pin 1, 4, 6, or 7 0.6 nH Pin 5 & 8 SRDA3.3-4 Spice Model SRDA3.3-4 Spice Parameters Parameter IS BV VJ RS IBV CJO TT M N EG Unit Amp Volt Volt O hm Amp Farad sec --eV D1 (LCRD) 2.092E-11 680 0.62 0.180 1 E -3 5.2E-12 2.541E-9 0.058 1.1 1.11 D2 (LCRD) 2.156E-12 240 0.64 0.155 1E-3 6.2E-12 2.541E-9 0.058 1.1 1.11 D3 (T VS) 6.09E-14 3.54 13.8 0 .2 2 0 10E-3 45E-12 2.541E-9 0.111 1.1 1.11 (c) 2008 Semtech Corp. 6 www.semtech.com SRDA3.3-4 PROTECTION PRODUCTS Outline Drawing - SO-8 A e N h 2X E/2 E1 E GAGE PLANE 1 ccc C 2X N/2 TIPS 2 e/2 B D aaa C A2 A SEATING PLANE C bxN bbb A1 C A-B D SIDE VIEW SEE DETAIL DETAIL 0.25 L (L1) H c D h DIM A A1 A2 b c D E1 E e h L L1 N 01 aaa bbb ccc DIMENSIONS INCHES MILLIMETERS MIN NOM MAX MIN NOM MAX .053 .069 .010 .004 .065 .049 .012 .020 .010 .007 .189 .193 .197 .150 .154 .157 .236 BSC .050 BSC .010 .020 .016 .028 .041 (.041) 8 8 0 .004 .010 .008 1.35 1.75 0.10 0.25 1.25 1.65 0.31 0.51 0.17 0.25 4.80 4.90 5.00 3.80 3.90 4.00 6.00 BSC 1.27 BSC 0.25 0.50 0.40 0.72 1.04 (1.04) 8 0 8 0.10 0.25 0.20 01 A A NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H3. DIMENSIONS "E1" AND "D" DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 4. REFERENCE JEDEC STD MS-012, VARIATION AA. Land Pattern - SO-8 X DIM (C) G Z C G P X Y Z DIMENSIONS INCHES MILLIMETERS (.205) .118 .050 .024 .087 .291 (5.20) 3.00 1.27 0.60 2.20 7.40 Y P NOTES: 1. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET. 2. REFERENCE IPC-SM-782A, RLP NO. 300A. (c) 2008 Semtech Corp. 7 www.semtech.com SRDA3.3-4 PROTECTION PRODUCTS Marking Diagram Ordering Information Part Number Lead Finish SnPb Matte Sn Qty per Reel 500 500 R eel Size 7 Inch 7 Inch SC YYWW SRDA3.3-4 PHIL SRDA3.3-4.TB SRDA3.3-4.TBT Note: Lead-free devices are RoHS/WEEE Compliant Note: YYWW = Date Code Tape and Reel Specification Pin 1 Location User Direction of feed Device Orientation in Tape A0 6.50 +/-0.20 mm B0 5.40 +/-0.20 mm K0 2.00 +/-0.10 mm Tape Width B, (Max) D D1 E F K (MAX) P P0 P2 T(MAX) W 12 mm 8.2 mm 1.5 + 0.1 mm - 0.0 mm 1.5 mm 1.750.10 mm 5.50.05 mm 4.5 mm 4.00.1 mm 4.00.1 mm 2.00.05 mm 0.4 mm 12.0 mm 0.3 Contact Information Semtech Corporation Protection Products Division 200 Flynn Road, Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804 (c) 2008 Semtech Corp. 8 www.semtech.com |
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