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MMDT221F NPN Silicon Epitaxial Planar Transistor For digital circuits applications SOT-23 Plastic Package Collector (Output) Base (Input) R1 R2 Emitter (Common) Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO IC Ptot Tj TS Value 50 50 100 200 150 -55 to +150 Unit V V mA mW O C C O Resistor Values Type MMDT221F R1 (K) 4.7 R2 (K) 10 SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 31/03/2006 MMDT221F Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 10 V, IC = 5 mA Collector Base Breakdown Voltage at IC = 10 A Collector Emitter Breakdown Voltage at IC = 2 mA Collector Base Cutoff Current at VCB = 50 V Collector Emitter Cutoff Current at VCE = 50 V Emitter Base Cutoff Current at VEB = 6 V Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.3 mA Output Voltage Low Level at VCC = 5 V, VB = 2.5 V, RL = 1 K Output Voltage High Level at VCC = 5 V, VB = 0.5 V, RL = 1 K Transition Frequency at VCB = 10 V, -IE = 2 mA, f = 200 MHz Input Resistor Resistor Ratio Symbol hFE V(BR)CBO V(BR)CEO ICBO ICEO IEBO VCEsat VOL VOH fT R1 R1/R2 Min. 30 50 50 4.9 3.3 0.37 Typ. 150 4.7 Max. 100 500 1 0.25 0.2 6.1 0.57 Unit V V nA nA mA V V V MHz K - SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 31/03/2006 |
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