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| EIC7678-25 UPDATED 07/23/2008 7.60-7.80 GHz 25-Watt Internally Matched Power FET 2X 0.079 MIN 4X 0.102 FEATURES * * * * * * * 7.60- 7.80GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +44.5 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compression 30% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH 0.945 0.803 Excelics EIC7678-25 0.024 0.580 YYWW SN 0.315 0.685 0.010 0.158 0.617 0.004 0.055 0.095 0.055 0.168 ELECTRICAL CHARACTERISTICS (Ta = 25C) Caution! ESD sensitive device. SYMBOL P1dB G1dB G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1) Output Power at 1dB Compression f = 7.60-7.80GHz VDS = 10 V, IDSQ 6500mA Gain at 1dB Compression f = 7.60-7.80GHz VDS = 10 V, IDSQ 6500mA Gain Flatness f = 7.60-7.80GHz VDS = 10 V, IDSQ 6500mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ 6500mA f = 7.60-7.80GHz Drain Current at 1dB Compression Saturated Drain Current Pinch-off Voltage Thermal Resistance 2) MIN 43.5 7.5 TYP 44.5 8.5 MAX UNITS dBm dB 0.6 30 6800 11 -2.5 1.3 7700 13 -4.0 1.6 o dB % mA A V C/W f = 7.60-7.80GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 130 mA 2) Overall Rth depends on case mounting. Note: 1) Tested with 50 Ohm gate resistor. MAXIMUM RATING AT 25C1,2 SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 15 -5 38.5 dBm 175 oC -65 to +175 oC 93W CONTINUOUS2 10V -4V @ 3dB Compression 175 oC -65 to +175 oC 93W Vds Vgs Pin Tch Tstg Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 2 Revised July 2008 EIC7678-25 UPDATED 07/23/2008 7.60-7.80 GHz 25-Watt Internally Matched Power FET S-PARAMETERS Measured at Vds=10V, IDSQ=6500mA P1dB vs Frequency 47 46 45 12 10 8 G1dB vs Frequency P 1d B /d B m 44 43 42 41 7.55 G 1d B /d B m 7.6 7.65 7.7 Freq/GHz 7.75 7.8 7.85 6 4 2 0 7.55 7.6 7.65 7.7 Freq/GHz 7.75 7.8 7.85 Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 2 Revised July 2008 |
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