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  Datasheet File OCR Text:
 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUT56AF
DESCRIPTION With TO-220Fa package High voltage;high speed High power dissipation APPLICATIONS Switching mode power supply
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION
Absolut maximum ratings (Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tj Tstg

PARAMETER
CONDITIONS Open emitter
Collector-base voltage
HAN INC
Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current-peak Total power dissipation Junction temperature Storage temperature
SEM GE
Open base
OND IC
TOR UC
VALUE 1000 450 6 8 10 4
UNIT V V V A A A W ae ae
Open collector
TC=25ae
50 150 -65~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=100mA ;LC=125mH IE=1mA ;IC=0 IC=4A ;IB=0.8A VCE=1000V; VBE=0 Tj=150ae IC=1A ; VCE=5V IC=3A ; VCE=2V IC=0.5A ;VCE=10V;f=1.0MHz 15 4 10 MIN 450 6
BUT56AF
SYMBOL V(BR)CEO V(BR)EBO VCEsat ICES hFE-1 hFE-2 fT
TYP.
MAX
UNIT V V
2.0 1.0 2.0 45
V mA
MHz
Switching times toff tf
Turn-off time

Fall time
HAN INC
SEM GE
IC=4A ;IB1=-IB2=1.25A tp=20|I s
OND IC
TOR UC
4 1 |I
|I
s s
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BUT56AF
SEM GE
HAN INC
OND IC
TOR UC
Fig.2 Outline dimensions (unindicated tolerance:A
0.15mm)
3


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