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| JMnic Product Specification Silicon PNP Power Transistors 2SA743 2SA743A DESCRIPTION With TO-126 package Complement to type 2SC1212/1212A APPLICATIONS For low frequency power amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL PARAMETER 2SA743 VCBO Collector-base voltage 2SA743A 2SA743 VCEO Collector- emitter voltage 2SA743A VEBO IC Emitter-base voltage Collector current Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature -55 8 150 +150 ae ae Open collector Open base -80 -4 -1 0.75 W V A Open emitter -80 -50 V CONDITIONS VALUE -50 V UNIT JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2SA743 IC=-10mA ;RBE= 2SA743A 2SA743 IC=-1mA ;IE=0 2SA743A IE=-1mA ;IC=0 IC=-1A ;IB=-0.1A IC=-50mA ; VCE=-4V 2SA743 2SA743A VCE=-50V; RBE=1k| VCE=-80V; RBE=1k| IC=-50mA ; VCE=-4V IC=-1A ; VCE=-4V IC=-30mA ; VCE=-4V CONDITIONS 2SA743 2SA743A SYMBOL MIN -50 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -80 -50 V -80 -4 -0.75 -0.65 -1.5 -1.0 -20 -20 60 20 120 MHz 200 |I |I V V V A A V(BR)CBO Collector-base breakdown voltage V(BR)EBO VCEsat VBE Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage ICER Collector cut-off current hFE-1 hFE-2 fT DC current gain DC current gain Transition frequency hFE-1 Classifications B 60-120 C 100-200 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA743 2SA743A Fig.2 Outline dimensions 3 JMnic Product Specification Silicon PNP Power Transistors 2SA743 2SA743A 4 |
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