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| STB/P432S S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 40V FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. ID 60A RDS(ON) (m) Max 9 @ VGS=10V 11 @ VGS=4.5V D G S G D S S TB S E R IE S TO-263(DD-P AK) S TP S E R IE S TO-220 ABSOLUTE MAXIMUM RATINGS ( T C=25 C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous b a Limit 40 20 TC=25C 60 240 130 TC=25C 62.5 -55 to 150 Units V V A A mJ W C -Pulsed Sigle Pulse Avalanche Energy d Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient 2 50 C/W C/W Details are subject to change without notice. Jun,24,2008 1 www.samhop.com.tw STB/P432S Ver 1.0 ELECTRICAL CHARACTERISTICS ( TC=25 C unless otherwise noted ) 4 Symbol Parameter Conditions VGS=0V , ID=250uA VDS=32V , VGS=0V Min 40 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS IGSS Gate-Body Leakage Current ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance VGS= 20V , VDS=0V 1 100 1 1.7 7 9 26 1600 280 150 20 21 45 16 32 15 3.5 7.3 30 0.95 1.3 3 9 11 uA nA V m ohm m ohm S pF pF pF ns ns ns ns nC nC nC nC A V VDS=VGS , ID=250uA VGS=10V , ID=30A VGS=4.5V , ID=28A VDS=10V , ID=30A Forward Transconductance DYNAMIC CHARACTERISTICS c Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS c SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge VDS=15V,VGS=0V f=1.0MHz VDD=15V ID=30A VGS=10V RGEN=3.3 ohm VDS=15V,ID=30A,VGS=10V VDS=15V,ID=28A,VGS=4.5V VDS=15V,ID=30A, VGS=10V Gate-Drain Charge c DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuous Drain-Source Diode Forward Current IS VSD Diode Forward Voltage VGS=0V,IS=30A Notes _ a.Surface Mounted on FR4 Board,t < 10sec. _ _ b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.Starting TJ=25C,L=1.25mH,RG=25,VDD = 20V.(See Figure13) Jun,24,2008 2 www.samhop.com.tw STB/P432S Ver 1.0 60 V G S =4 V 20 T j =125 C 50 ID, Drain Current(A) ID, Drain Current(A) V G S = 4.5V 15 -55 C 10 25 C 40 V G S = 10V 30 20 V G S =3 V 5 10 V G S = 2.5V 0 0 0.5 1 1.5 2 2.5 3 0 0 0.8 1.6 2.4 3.2 4.0 4.8 VDS, Drain-to-Source Voltage(V) VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 15 Figure 2. Transfer Characteristics 2.0 1.8 1.6 1.4 1.2 1.0 0 V G S =10V ID=30A V G S =4.5V ID=28A 12 RDS(on)(m ) V G S = 4.5V 9 6 V G S = 10V 3 1 1 12 24 36 48 60 RDS(on), On-Resistance Normalized 0 25 50 75 100 125 150 T j ( C ) ID, Drain Current(A) Tj, Junction Temperature( C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.3 Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=250uA Vth, Normalized Gate-Source Threshold Voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 V DS =V G S ID=250uA 100 125 150 Tj, Junction Temperature( C ) Tj, Junction Temperature( C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Jun,24,2008 3 www.samhop.com.tw STB/P432S Ver 1.0 30 25 20.0 Is, Source-drain current(A) ID=30A 10.0 5.0 RDS(on)(m ) 20 15 10 5 0 25 C 75 C 125 C 75 C 125 C 25 C 1.0 0 2 4 6 8 10 0 0.24 0.48 0.72 0.96 1.2 VGS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 2400 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 VGS, Gate to Source Voltage(V) 2000 C, Capacitance(pF) 8 6 4 2 0 0 VDS =15V ID=30A 1600 1200 800 C os s 400 0 0 C rs s 5 10 C is s 15 20 25 30 5 10 15 20 25 30 35 40 VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 220 T D(off) 1000 ID, Drain Current(A) Switching Time(ns) 100 60 10 Tr T D(on) Tf 100 R DS ( ) ON L im it 1m 10 DC m s 10 s 0u s 10 V G S =10V S ingle P ulse T c=25 C 1 1 V DS =15V ,ID=30A V G S =10V 6 10 60 100 300 600 1 0.1 1 10 100 Rg, Gate Resistance() VDS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Jun,24,2008 4 www.samhop.com.tw STB/P432S Ver 1.0 15V V ( BR )D S S tp VDS L DR IV E R RG 20V D .U .T IA S tp + - VD D A 0.0 1 IAS Unclamped Inductive Test Circuit Figure 13a. Unclamped Inductive Waveforms Figure 13b. 2 r(t),Normalized Effective Transient Thermal Impedance 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 S ingle P uls e P DM t1 t2 1. 2. 3. 4. R J C (t)=r (t) * R J C R J C =S ee Datas heet T J M-T C = P * R J C (t ) Duty C ycle, D=t1/t2 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (msec) Figure 14. Normalized Thermal Transient Impedance Curve Jun,24,2008 5 www.samhop.com.tw STB/P432S Ver 1.0 Jun,24,2008 6 www.samhop.com.tw STB/P432S Ver 1.0 Jun,24,2008 7 www.samhop.com.tw STB/P432S Ver 1.0 TO-220/263AB Tube Jun,24,2008 8 www.samhop.com.tw |
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