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Datasheet File OCR Text: |
MMBTA10 / MMBTA11 NPN Silicon Epitaxial Planar Transistor VHF / UHF transistor SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 C) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj Ts Rating 30 25 3 100 200 150 - 55 to + 150 Unit V V V mA mW O o C C O Characteristics at Tamb = 25 OC Parameter DC Current Gain at VCE = 10 V, IC = 4 mA Collector Base Breakdown Voltage at IC = 100 A Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 10 A Collector Cutoff Current at VCB = 25 V Emitter Cutoff Current at VEB = 2 V Collector Emitter Saturation Voltage at IC = 4 mA, IB = 0.4 mA Base-Emitter On Voltage at VCE = 10 V, IC = 4 mA Current Gain Bandwidth Product at VCE = 10 V, IC = 4 mA, f = 100 MHz Collector Base Capacitance at VCB = 10 V, f = 1 MHz Collector Base Feedback Capacitance MMBTA10 VCB = 10 V, f = 1 MHz MMBTA11 Symbol hFE V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(on) fT Ccb Crb Min 60 30 25 3 650 0.35 0.6 Max 100 100 0.5 0.95 0.7 0.65 0.9 Unit V V V nA nA V V MHz pF pF pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 17/06/2006 |
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