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| MMBT8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type the PNP transistor MMBT8550 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 40 25 6 600 350 150 - 55 to + 150 Unit V V V mA mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 1 V, IC = 100 mA at VCE = 1 V, IC = 500 mA Collector Base Cutoff Current at VCB = 35 V Collector Base Breakdown Voltage at IC = 10 A Collector Emitter Breakdown Voltage at IC = 2 mA Emitter Base Breakdown Voltage at IE = 100 A Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Base Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Gain Bandwidth Product at VCE = 5 V, IC = 10 mA Symbol MMBT8050C MMBT8050D hFE hFE hFE ICBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) fT Min. 100 160 40 40 25 6 - Typ. 100 Max. 250 400 100 0.5 1.2 - Unit nA V V V V V MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 11/04/2008 MMBT8050 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 11/04/2008 |
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