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| SMD Type P-Channel Enhancement Mode Field Effect Transistor KO3413 MOSFET Features VDS (V) = -20V ID = -3 A +0.1 2.4-0.1 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm RDS(ON) 97m (VGS = -4.5V) RDS(ON) 130m (VGS = -2.5V) RDS(ON) 190m (VGS = -1.8V) D +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1. Gate G S +0.1 0.38-0.1 0-0.1 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current *1 TA=25 TA=70 Pulsed Drain Current *2 Power Dissipation *1 TA=25 TA=70 Thermal Resistance.Junction-to-Ambient *1 Junction and Storage Temperature Range RJA TJ, TSTG 2 Symbol VDS VGS ID IDM PD Rating -20 8 -3 -2.4 -15 1.4 0.9 125 -55 to 150 Unit V V A W /W *1The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25 *2 Repetitive rating, pulse width limited by junction temperature. www.kexin.com.cn 1 SMD Type KO3413 Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Symbol VDSS IDSS IGSS VGS(th) Testconditons ID=-250A, VGS=0V VDS=-16V, VGS=0V VDS=-16V, VGS=0V ,TJ=55 VDS=0V, VGS=8V VDS=VGS ID=-250A VGS=-4.5V, ID=-3A Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V, ID=-3A VGS=-2.5V, ID=-2.6A VGS=-1.8V, ID=-1A On state drain current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-0ff DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Maximum Body-Diode Continuous Current Diode Forward Voltage ID(ON) gFS Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr IS VSD IS=-1A,VGS=0V IF=-3A, dI/dt=100A/s IF=-3A, dI/dt=100A/s VGS=-4.5V, VDS=-10V, RL3.3,RGEN=3 VGS=-4.5V, VDS=- =-10V, ID=-3A VGS=0V, VDS=0V, f=1MHz VGS=0V, VDS=-10V, f=1MHz VGS=-4.5V, VDS=-5V VDS=-5V, ID=-3A -15 4 TJ=125 -0.3 Min -20 MOSFET Typ Max Unit V -1 -5 100 -0.55 81 111 108 146 -1 97 135 130 190 A A V m A 7 540 72 49 12 6.1 0.6 1.6 10 12 44 22 21 7.5 -2 -0.78 -1 S pF pF pF nC nC nC ns ns ns ns ns nC A V www.kexin.com.cn 2 |
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