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| To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FY6ACJ-03A HIGH-SPEED SWITCHING USE FY6ACJ-03A OUTLINE DRAWING Dimensions in mm 6.0 4.4 5.0 1.8 MAX. 0.4 1.27 SOURCE GATE DRAIN G 4V DRIVE G VDSS .................................................................................. 30V G rDS (ON) (MAX) .............................................................. 23m G ID ........................................................................................... 6A SOP-8 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS (Tc = 25C) Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg -- Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 30 20 6 42 6 1.7 6.8 1.8 -55 ~ +150 -55 ~ +150 0.07 Unit V V A A A A A W C C g Sep. 2001 L = 10H MITSUBISHI Nch POWER MOSFET FY6ACJ-03A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25C) Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-a) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Test conditions ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 30V, VGS = 0V ID = 1mA, VDS = 10V ID = 6A, VGS = 10V ID = 3A, VGS = 4V ID = 6A, VGS = 10V ID = 6A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz Limits Min. 30 -- -- 1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 1.5 17 26 102 12 1000 350 160 15 25 75 55 0.75 -- 35 Max. -- 0.1 0.1 2.0 23 40 138 -- -- -- -- -- -- -- -- 1.10 69.4 -- Unit V A mA V m m mV S pF pF pF ns ns ns ns V C/W ns VDD = 15V, ID = 3A, VGS = 10V, RGEN = RGS = 50 IS = 1.7A, VGS = 0V Channel to ambient IS = 1.7A, dis/dt = -50A/s PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 2.0 MAXIMUM SAFE OPERATING AREA 2 POWER DISSIPATION PD (W) 102 1.6 DRAIN CURRENT ID (A) 7 5 3 2 7 5 3 2 7 5 3 2 tw = 100s 101 1ms 10ms 100ms 1.2 0.8 100 0.4 10-1 7 5 3 2 TC = 25C Single Pulse DC 0 0 50 100 150 200 2 3 57100 2 3 57101 2 3 57102 2 3 57103 2 CASE TEMPERATURE TC (C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 50 VGS = 10V 8V 6V 5V TC = 25C Pulse Test OUTPUT CHARACTERISTICS (TYPICAL) 20 TC = 25C Pulse Test VGS = 10V 8V 6V 5V 4V DRAIN CURRENT ID (A) 40 DRAIN CURRENT ID (A) 4V 16 3V 30 12 20 3V 8 10 PD = 1.8W 4 PD = 1.8W 0 0 0.4 0.8 1.2 1.6 2.0 0 0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Sep. 2001 MITSUBISHI Nch POWER MOSFET FY6ACJ-03A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 1.0 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) TC = 25C Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 40 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m) TC = 25C Pulse Test VGS = 4V 0.8 32 0.6 ID = 24A 24 10V 0.4 12A 16 0.2 6A 3A 8 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) 0 0 2 4 6 8 10 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 50 TC = 25C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) 102 VDS = 10V 7 Pulse Test 5 4 TC = 25C 3 75C 125C 2 DRAIN CURRENT ID (A) 30 FORWARD TRANSFER ADMITTANCE yfs (S) 40 101 7 5 4 3 2 20 10 0 0 2 4 6 8 10 100 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 5 3 2 SWITCHING CHARACTERISTICS (TYPICAL) 102 7 5 4 3 2 td(off) tf tr td(on) 103 7 5 3 2 Ciss Coss Crss SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 101 7 5 4 3 2 102 7 5 3 TCh = 25C 2 f = 1MHZ VGS = 0V TCh = 25C VDD = 15V VGS = 10V RGEN = RGS = 50 2 3 4 5 7 101 2 3 4 5 7 102 101 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN-SOURCE VOLTAGE VDS (V) 100 0 10 DRAIN CURRENT ID (A) Sep. 2001 MITSUBISHI Nch POWER MOSFET FY6ACJ-03A HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 50 SOURCE CURRENT IS (A) VGS = 0V Pulse Test 10 TCh = 25C ID = 6A VDS = 15V 20V 25V 8 40 6 30 TC = 125C 75C 25C 4 20 2 10 0 0 4 8 12 16 20 0 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 VGS = 10V 7 ID = 6A 5 Pulse Test 3 2 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 4.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) VDS = 10V ID = 1mA 3.2 2.4 100 7 5 3 2 1.6 0.8 10-1 -50 0 50 100 150 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE Zth (ch - a) (C/ W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 D = 1.0 3 0.5 2 1.2 101 0.2 7 5 0.1 3 2 PDM tw 1.0 0.8 100 7 5 3 2 0.05 0.02 0.01 Single Pulse T D= tw T 0.6 0.4 -50 0 50 100 150 10-1 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103 PULSE WIDTH tw (s) Sep. 2001 CHANNEL TEMPERATURE Tch (C) |
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