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1SS5004WS
SILICON EPITAXIAL PLANAR DIODE
High Voltage Switching Diode
PINNING PIN 1 DESCRIPTION Cathode Anode
2
Features * Fast switching speed * High conductance * High reverse breakdown voltage rating
1
2
YM Top View Marking Code: "YM" Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Repetitive Peak Reverse Voltage Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current Non-Repetitive Peak Forward Surge Current (1 ms) Power Dissipation Junction Temperature Storage Temperature Range
Symbol VRRM VR IF IFRM IFSM Pd Tj Ts
Value 400 350 225 625 2 350 150 - 65 to + 150
Unit V V mA mA A mW
O
C C
O
Characteristics at Ta = 25 OC
Parameter Forward Voltage at IF = 20 mA at IF = 100 mA at IF = 200 mA Reverse Current at VR = 240 V Reverse Breakdown Voltage at IR = 150 A Total Capacitance at VR = 0 , f = 1 MHz Reverse Recovery Time at IF = IR = 30 mA , irr = 3 mA, RL = 100 Symbol VF Min. 400 Max. 0.87 1 1.25 100 5 100 Unit V
IR V(BR)R CT trr
nA V pF ns
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 15/03/2008
1SS5004WS
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 15/03/2008
1SS5004WS
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads SOD-323
A c
HE D A
E
bp
UNIT mm
A 1.10 0.80
bp 0.40 0.25
C 0.15 0.00
D 1.80 1.60
E 1.35 1.15
HE 2.80 2.30
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 15/03/2008

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