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CHONGQING PINGYANG ELECTRONICS CO.,LTD. 1N4001G THRU 1N4007G TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER VOLTAGE50-1000V CURRENT1.0A FEATURES *High reliability *Low leakage *Low forward voltage drop *High current capability DO-41 1.0(25.4) MIN. .205(5.2) .166(4.2) .034(0.9) .028(0.7) DIA. DIA. MECHANICAL DATA *Case: Molded plastic *Epoxy: UL94V-0 rate flame retardant *Lead: MIL-STD- 202E, Method 208 guaranteed *Polarity:Color band denotes cathode end *Mounting position: Any *Weight: 0.33 grams .107(2.7) .080(2.0) 1.0(25.4) MIN. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL 1N4001G 1N4002G 1N4003G1N4004G1N4005G 1N4006G1N4007Gunits Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward rectified Current at TA=75C Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Maximum Instantaneous forward Voltage at 1.0A DC @ TA=25C Maximum DC Reverse Current at Rated DC Blocking Voltage @ TA=100C Maximum Full Load Reverse Current Average Full Cycle .375"(9.5mm) lead length at TL=75C VRRM VRMS VDC Io 50 35 50 100 70 100 200 140 200 400 280 400 1.0 600 420 600 800 560 800 1000 700 1000 V V V A IFSM VF 30 1.1 5.0 A V IR 500 30 15 50 A CJ Typical Junction Capacitance (Note) RJA Typical Thermal Resistance Notes: Measured at 1MHz and applied reverse voltage of 4.0 volts pF C/W PDF "pdfFactory Pro" www.fineprint.cn |
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