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| 2SC5585F Elektronische Bauelemente RoHS Compliant Product NPN Silicon General Purpose Transistor FEATURES High Current Low VCE(sat) - VCE(sat) 250mV at IC = 200mA/IB=10mA A SOT-523 Dim A B C D S 2 3 Top View 1 Min 1.50 0.78 0.80 0.28 0.90 0.00 0.10 0.35 0.49 1.50 Max 1.70 0.82 0.82 0.32 1.10 0.10 0.20 0.41 0.51 1.70 MARKING CODE BX L B G H J K L S D 3. Collector 2. Base G C J K 1. Emitter H All Dimension in mm Maximum Ratings (Ta=25 o C unless otherwise specified) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (continuous) Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Value 15 12 6 0.5 0.15 -55~+150 -55~+150 Unit V V V A W o o C C Electrical Characteristics (Tamb=25 o C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Transition frequency Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. 15 12 6 Typ. Max. Unit V V V A A Conditions IC=10 A, IE=0 IC=1mA, IB=0 IE=10 A, IC=0 VCB=15V, IE=0 VEB= 6V, IC=0 VCE=2V, IC=10mA 0.1 0.1 270 680 0.25 320 7.5 V MHz pF IC=200mA, IB=10mA VCE=2V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz Collector Output capacitance Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 2SC5585F Elektronische Bauelemente NPN Silicon General Purpose Transistor z(OHFWULFDO CKDUDFWHULVWLF CXUYHV http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2 |
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