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| 2SC4226 Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free NPN Silicon Plastic Encapsulated Transistor FEATURE The 2SC4226 is a Low supply voltage transistor designed for VHF, UHF low noise amplifier Suitable for a high density surface mount assembly since the transistor has been applied small mini mold package K A 3 SOT-323 L 3 Top View 1 2 CB 1 2 E D PACKAGING INFORMATION Weight: 0.0074 g 1 Base Collector 3 F G H J REF. MARKING CODE r23, r24, r25 2 Emitter A B C D E F Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP. ABSOLUTE MAXIMUM RATINGS (at TA = 25C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings 20 12 3 0.1 150 +150, -65 ~ +150 Unit V V V A mW ELECTRICAL CHARACTERISTICS (at TA = 25C unless otherwise specified) Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Transition Frequency Feed Back Capacitance Noise Figure Symbol ICBO IEBO hFE* fT Cre NF Min. 40 3.0 - Typ. - Max. 1 1 250 1.5 2.5 Unit A A GHz pF dB Test Conditions VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 3V, IC = 7 mA VCE = 3V, IC = 7 mA VCE = 3V, IE = 0, f = 1 MHz VCE = 3V, IC = 7mA, f = 1GHz * Pulse Test: Pulse Width 350s, Duty Cycle 2% CLASSIFICATION OF hFE Marking Rank Range r23 P 40 - 80 r24 Q 70 - 140 r25 R 125 - 250 01-June-2002 Rev. A Page 1 of 3 2SC4226 Elektronische Bauelemente NPN Silicon Plastic Encapsulated Transistor CHARACTERISTIC CURVES 01-June-2002 Rev. A Page 2 of 3 2SC4226 Elektronische Bauelemente NPN Silicon Plastic Encapsulated Transistor CHARACTERISTIC CURVES 01-June-2002 Rev. A Page 3 of 3 |
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