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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3626 DESCRIPTION *With TO-220Fa package *High collector breakdown voltage *Excellent switching times APPLICATIONS *Switching regulator and high voltage switching applications *High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION * Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 40 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 8 10 4 2.0 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA; IB=0 IC=1mA; IE=0 IC=4 A;IB=0.8 A IC=4 A;IB=0.8 A VCB=400V ;IE=0 VEB=7V ;IC=0 IC=1A ; VCE=5V IC=4A ; VCE=5V 15 10 MIN 400 500 2SC3626 TYP. MAX UNIT V V 1.0 1.5 100 1 V V A mA Switching times tr ts tf Rise time Storage time Fall time VCC200V,RL=50 IC=4A ;IB1=-IB2=0.4 A 1.0 2.5 1.0 s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3626 Fig.2 Outline dimensions (unindicated tolerance:0.15 mm) 3 |
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