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  Datasheet File OCR Text:
 SMD Type
P-Channel 1.25-W, 1.8-V (G-S) Mosfet KI2305DS
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors
Unit: mm
+0.1 2.4-0.1
Features
P-Channel 1.25-W, 1.8-V (G-S) MOSFET.
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 1. Gate 2.Emitter 2. Source
+0.1 0.38-0.1
0-0.1
3. Drain 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 ) TA=25 -TA=70 Pulsed drain current Continuous source current (diode conduction) * Power dissipation * -TA=25 TA=70 Symbol VDS VGS ID IDM IS PD Tj,Tstg RthJA Rating -8 8 3.5 2.8 12 -1.6 1.25 0.8 -55 to +150 100 130 /W Unit V V A A A W
Operating junction and storage temperature range Junction-to-ambient * t 5 sec
Steady State * Surface mounted on FR4 board, t 5 sec.
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1
SMD Type
KI2305DS
Electrical Characteristics Ta = 25
Parameter Drain-source breakdown voltage Gate threshold voltage Gate-body leakage Zero gate voltage drain current Symbol Testconditons A Min -8 -0.45
Transistors
Typ
Max
Unit V
V(BR)DSS VGS = 0 V, ID = -10 VGS(th) IGSS IDSS
VDS = VGS, ID = -250 iA VDS = 0 V, VGS = 8V
100 -1 -10 -6 -3 0.044 0.052 0.060 0.071 0.087 0.108 8.5 -1.2 10 15
nA A
VDS = -6.4 V, VGS = 0 V VDS = -6.4 V, VGS = 0 V, TJ = 55
On-state drain current
ID(on)
VDS VDS
-5 V, VGS = -4.5 V -5 V, VGS = -2.5 V
A
VGS = -4.5 V, ID = -3.5 A Drain-source on-state resistance rDS(on) VGS = -2.5 V, ID = -3.0 A VGS = -1.8 V, ID = -2.0 A Forward transconductance Diode forward voltage Total gate charge * Gate-source charge * Gate-drain charge * Input capacitance * Output capacitance * Reverse transfer capacitance * Turn-on time gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr Turn-off time * Pulse test: PW 300 is duty cycle 2%. td(off) tf VDD = -4V , RL = 4U , ID = -1A , VGEN =- 4.5V , RG = 6U VDS = -4V ,VGS = 0 , f = 1 MHz VDS = -4V ,VGS = -4.5 V , ID= -3.5 A VDS = -5 V, ID = -3.5 A IS = -1.6 A, VGS = 0 V
S V
2 2 1245 375 210 13 25 55 19 20 40 80 35
nC
pF
ns
Marking
Marking A5
2
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