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| Ordering number : ENN8023 2SK3709 2SK3709 Features * * * * N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Motor driver, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Enargy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW10s, duty cycle1% Tc=25C Conditions Ratings 100 20 37 148 2.0 35 150 --55 to +150 427 37 Unit V V A A W W C C mJ A *1 VDD=20V, L=500H, IAV=37A *2 L500H, single pulse Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0 VDS=100V, VGS=0 VGS= 16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=19A ID=19A, VGS=10V ID=19A, VGS=4V 1.2 25 36 19 23 25 32 Ratings min 100 1 10 2.6 typ max Unit V A A V S m m Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21405QA TS IM TB-00000494 No.8023-1/4 2SK3709 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=50V, VGS=10V, ID=37A VDS=50V, VGS=10V, ID=37A VDS=50V, VGS=10V, ID=37A IS=37A, VGS=0 Ratings min typ 6250 440 380 45 115 500 180 117 20 25.8 0.97 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Marking : K3709 Package Dimensions unit : mm 2063A 10.0 3.2 4.5 2.8 3.5 7.2 16.0 18.1 5.6 14.0 1.6 1.2 0.75 12 3 2.55 2.4 0.7 2.55 2.4 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML 2.55 2.55 Switching Time Test Circuit VIN 10V 0V VIN ID=19A RL=2.63 VDD=50V Unclamped Inductive Test Circuit L 50 DUT D PW=10s D.C.1% VOUT G 10V 0V 50 VDD 2SK3709 P.G 50 S No.8023-2/4 2SK3709 70 ID -- VDS 10V 25C Tc= -25C 1.0 1.5 2.0 2.5 60 4V 60 Drain Current, ID -- A 6V 50 Drain Current, ID -- A 50 40 40 30 30 20 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0 0.5 3.0 3.5 4.0 4.5 Drain-to-Source Voltage, VDS -- V 50 IT07352 50 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 25 C 10 VGS=3V 10 Tc= 75 C --25 C RDS(on) -- Tc ID=19A Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 45 40 35 30 25 20 15 10 5 2 3 4 5 6 7 8 9 10 IT07354 45 40 35 30 25 20 15 10 5 --50 Tc=75C 25C I D= , 19A =4V V GS --25C , VG 19A I D= 10 S= V --25 0 25 50 75 100 125 75C IT07353 150 IT07355 Tc=25C 70 ID -- VGS VDS=10V Gate-to-Source Voltage, VGS -- V 100 yfs -- ID Case Temperature, Tc -- C 100 7 5 3 2 IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S 7 5 VDS=10V Forward Current, IF -- A 3 2 25 --2 C C 5 10 7 5 3 2 1.0 7 5 3 2 10 7 5 3 2 = Tc C 75 Tc=7 5C 25C 0 0.3 0.6 1.0 0.1 0.01 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 1000 7 5 7 100 IT07356 10000 --25C 0.9 0.1 7 5 3 2 1.2 1.5 IT07357 SW Time -- ID td (off) Ciss, Coss, Crss -- VDS Ciss f=1MHz Diode Forward Voltage, VSD -- V VDD=50V VGS=10V Ciss, Coss, Crss -- pF 7 5 3 2 Switching Time, SW Time -- ns 5 3 2 tf 1000 7 5 3 100 7 5 3 0.1 tr Coss Crss td(on) 2 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 0 5 10 15 20 25 30 IT07359 Drain Current, ID -- A IT07358 Drain-to-Source Voltage, VDS -- V No.8023-3/4 2SK3709 10 9 VGS -- Qg VDS=50V ID=37A 3 2 100 7 5 ASO IDP=148A <10s 10 Gate-to-Source Voltage, VGS -- V 8 Drain Current, ID -- A ID=37A 10 s 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 IT07360 3 2 10 7 5 3 2 1.0 7 5 3 2 1m s 10 ms 1 DC 00m s op era tio n Operation in this area is limited by RDS(on). 0 s 0.1 0.1 Tc=25C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 Total Gate Charge, Qg -- nC 2.5 PD -- Ta Allowable Power Dissipation, PD -- W Drain-to-Source Voltage, VDS -- V 40 35 30 25 20 15 10 5 0 2 5 7 100 IT07361 PD -- Tc Allowable Power Dissipation, PD -- W 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT07362 Case Temperature, Tc -- C IT07363 Note on usage : Since the 2SK3709 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2005. Specifications and information herein are subject to change without notice. PS No.8023-4/4 |
Price & Availability of 2SK3709
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