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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2335 DESCRIPTION *With TO-3PFa package *High voltage;high speed *Built-in damper diode APPLICATIONS *For color TV horizontal output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base VALUE 1500 600 5 7 1.5 100 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain Diode forward voltage CONDITIONS IC=100mA , IB=0 IE=200mA , IC=0 IC=6A; IB=1.2A IC=6A; IB=1.2A VCB=800V IE=0 IC=1A ; VCE=5V IF=6A 8 MIN 600 5 2SD2335 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO hFE VF TYP. MAX UNIT V V 5.0 1.5 10 V V A 2.0 V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2335 Fig.2 Outline dimensions (unindicated tolerance:0.30mm) 3 |
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