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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-220C package *Complement to type 2SA1329 *High speed switching time : tstg=1.0s(Typ.) *Low collector saturation voltage : VCE(sat)=0.4V(Max.)@IC=6A APPLICATIONS *For high current switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC3346 Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 80 80 6 12 2 40 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA ; IB=0 IC=6A; IB=0.3A IC=6A; IB=0.3A VCB=80V ;IE=0 VEB=6V; IC=0 IC=1A ; VCE=1V IC=6A ; VCE=1V IC=1A ; VCE=5V IE=0 ; VCB=10V,f=1MHz 70 40 80 MIN 80 0.2 0.9 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB 2SC3346 TYP. MAX UNIT V 0.4 1.2 10 10 240 V V A A MHz pF 220 Switching times Ton tstg tf Turn-on time Storage time Fall time IB1=-IB2=0.3A; RL=5E,VCC=30V Pw=20s ;DutyF1% 0.2 1.0 0.2 s s s hFE-1 classifications O 70-140 Y 120-240 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3346 Fig.2 Outline dimensions (unindicated tolerance:0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3346 4 |
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