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| GaAlAs High power IR LED Emitters (660nm/905nm) PDI-E832 PACKAGE DIMENSIONS INCH [mm] .167 [4.24] C L .104 [2.64] C L RED L.E.D. CHIP I.R. L.E.D. CHIP .060 [1.52] C L WIRE BONDS METALIZED CERAMIC .055 [1.40] .025 [0.64] .063 [1.60] .250 [6.35] ENCAPSOLATE CONTACT B CONTACT A Metalized Ceramic Package FEATURES * Low Cost * 660 nm +/- 3nm * 2 drive line DESCRIPTION The PDI-E832 is a two drive line dual emitter oximeter component. The 660 and 905 nm GaAlAs infrared emitters are mounted in a glob toped. The LEDs are bias separately by alternating polarity on the bias pins. UNITS mW mA mA V C C C APPLICATIONS * Oximeter Probes * Finger Clamps * Reusable probes ABSOLUTE MAXIMUM RATING (TA)= 23C UNLESS OTHERWISE NOTED SYMBOL PARAMETER Pd If Ip Vr TSTG TO TS Power Dissipation Continuous Forward Current Peak Forward Current Reverse Voltage Storage Temperature Operating Temperature Soldering Temperature* -40 -40 MIN MAX 250 30 200 4 +80 +80 +240 SCHEMATIC A 660 nm LED 905 nm LED B * For 3 seconds max using a heat sink ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23C UNLESS OTHERWISE NOTED SYMBOL Po Iv Vf lp CHARACTERISTIC Radiant Flux Luminous Intensity Forward Voltage Peak Wavelength Spectral Halfwidth Rise Time Fall Time TEST CONDITIONS If = 20 mA If= 20 mA If = 20 mA If = 20 mA If = 20 mA If = 20 mA If = 20 mA MIN 1.8 20 660 nm TYP MAX 2.4 30 1.8 2.4 658 661 664 25 0.1 0.04 MIN 1.2 905 nm TYP MAX 1.8 1.2 905 50 1.4 0.7 1.5 915 UNITS mW mcd V nm nm uS uS 895 l tr tf Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 * Phone (805) 987-0146 * Fax (805) 484-9935 * www.advancedphotonix.com |
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