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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJF18008 DESCRIPTION With TO-220F package High voltage ,high speed APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220F) and symbol Emitter DESCRIPTION Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg Collector-base voltage Collector-emitter voltage PARAMETER INC Emitter-base voltage Collector current (DC) E SEM ANG H Open base TC=25ae Open emitter OND IC CONDITIONS TOR UC VALUE 1000 450 9 10 16 4 8 45 150 -65~150 UNIT V V V A A A A W ae ae Open collector Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-C Rth j-A PARAMETER Thermal resistance junction to case Thermal resistance junction to ambient VALUE 2.78 62.5 UNIT ae ae /W /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IC=0.1A; L=25mH IC=2A; IB=0.2A TC=125ae IC=4.5A; IB=0.9A TC=125ae IC=2A ;IB=0.2A IC=4.5A; IB=0.9A VCES=RatedVCES; VEB=0 TC=125ae VCES=800V ICEO IEBO hFE-1 hFE-2 hFE-3 hFE-4 fT COB Collector cut-off current Emitter cut-off current VCE=RatedVCEO; IB=0 VEB=9V; IC=0 IC=1A ; VCE=5V MIN 450 SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 MJF18008 TYP. MAX UNIT V 0.6 0.65 0.7 0.8 1.10 1.25 0.1 0.5 0.1 0.1 V V V V ICES Collector cut-off current mA mA mA DC current gain DC current gain DC current gain DC current gain CHA IN Transition frequency Turn-on time Turn-off time Turn-on time Turn-off time E SEM NG 10%,Pulse Width=20|I IC=4.5A ; VCE=1V IC=2A ; VCE=1V OND IC 14 6 TOR UC 0.1 34 13 100 11 IC=10mA ; VCE=5V 10 MHz pF IC=0.5A ; VCE=10V; f=1MHz IE=0; VCB=10V; f=1MHz s Collector outoput capacitance Switching times resistive load,Duty CycleU ton toff ton toff VCC=300V ,IC=2A IB1=0.2A; IB2=1.0A 0.3 2.5 0.18 2.5 |I |I |I s s s |I s VCC=300V ,IC=4.5A IB1=0.9A; IB2=2.25A 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE MJF18008 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 |
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