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| SMD Type TrenchMOSTM standard level FET KUK7109-75AIE TO-263 + .1 1 .2 7 -00.1 Transistors IC Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Integrated temperature sensor Electrostatic discharge protection Q101 compliant Standard level compatible. + .2 8 .7 -00.2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 + .2 5 .2 8 -00.2 2.54 +0.2 -0.2 +0.1 5.08-0.1 + .2 2 .5 4 -00.2 + .2 1 5 .2 5 -00.2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Tmb = 25 ,VGS = 10 V Drain current (DC) Tmb = 100 ,VGS = 10 V Drain current (pulse peak value) *1 Total power dissipation Tmb = 25 gate-source clamping current (continuous) gate-source clamping current *3 Storage & operating temperature reverse drain current (DC) Tmb = 25 pulsed reverse drain current *1 non-repetitive avalanche energy *2 electrostatic discharge voltage; all pins *4 Thermal resistance junction to mounting base Thermal resistance junction to ambient * 1 Tmb = 25 ; pulsed; tp 10 is; 75 V; VGS = 10 V; RGS = 50U;starting Tj = 25 Tstg, Tj IDR IDRM EDS(AL)S Vesd Rth j-mb Rth j-a Symbol VDS VDGR VGS ID ID IDM Ptot IGS(CL) Rating 75 75 20 120 75 480 272 10 50 -55 to 175 120 75 480 739 6 0.55 50 A A A J KV K/W K/W Unit V V V A A A W mA mA *2 unclamped inductive load; ID = 75 A;VDS *3 tp = 5 ms; = 0.01 *4 Human Body Model; C = 100 pF;R = 1.5 K 5 .6 0 1 gate 1 Gate 2 drain 2 Drain 3 source 3 Source www.kexin.com.cn 1 SMD Type KUK7109-75AIE Electrical Characteristics Ta = 25 Parameter drain-source breakdown voltage Symbol V(BR)DSS Testconditons ID = 0.25 mA; VGS = 0 V;Tj = 25 ID = 0.25 mA; VGS = 0 V;Tj = -55 ID = 1 mA; VDS = VGS;Tj = 25 gate-source threshold voltage VGS(th) ID = 1 mA; VDS = VGS;Tj = 175 ID = 1 mA; VDS = VGS;Tj = -55 Zero gate voltage drain current gate-source breakdown voltage gate-source leakage current IDSS VDS = 75 V; VGS = 0 V;Tj = 25 VDS = 75 V; VGS = 0 V;Tj = 175 V(BR)GSS IG = IGSS VGS = VGS = drain-source on-state resistance ratio of drain current to sense current total gate charge gate-to-source charge gate-to-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time internal drain inductance internal source inductance source-drain (diode forward) voltage reverse recovery time recovered charge RDSon ID/Isense Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf Ld Ls VSD trr Qr measured from upper edge of drain mounting base to center of die measured from source lead to source bond pad Is = 25A; VGS = 0 V IS = 20 A; -dIF/dt = -100 A/is; VGS = -10 V; VDS = 30 V VDD = 30 V; RL = 1.2U;VGS = 10 V; RG = 10U VGS = 0 V; VDS = 25 V;f = 1 MHz VGS = 10 V; VDD = 60 V;ID = 25 A 1 mA;-55 Tj 175 Transistors IC Min 75 70 2 1 Typ Max Unit V V 3 4 V V 4.4 0.1 10 250 20 22 22 1000 10 . 8 9 19 450 500 121 20 44 4700 800 455 35 108 185 100 2.5 7.5 0.85 75 270 1.2 550 V A A 10 V; VDS = 0 V;Tj = 25 10 V; VDS = 0 V;Tj = 175 nA A m m VGS = 10 V; ID = 50 A;Tj = 25 VGS = 10 V; ID = 50 A;Tj = 175 VGS > 10 V;-55 Tj 175 nC nC nC pF pF pF ns ns ns ns nH nH V ns nC 2 www.kexin.com.cn |
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