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H7N0608FM
Silicon N Channel MOS FET Power Switching
REJ03G0165-0100Z Rev.1.00 Dec.04.2003
Features
* Low on-resistance RDS(on) = 6.5 m typ. * Low drive current * 4.5 V gate drive device can be driven from 5 V source
Outline
TO-220FM
D
G
12 S
1. Gate 2. Drain 3. Source
3
Rev.1.00, Dec.04.2003, page 1 of 9
H7N0608FM
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) IDR IAP
Note3 Note1
Ratings 60 20 50 200 50 40 137 30 150 -55 to +150
Unit V V A A A A mJ W C C
EARNote3 Pch Tch Tstg
Note2
Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50
Rev.1.00, Dec.04.2003, page 2 of 9
H7N0608FM
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Symbol Min V(BR)DSS 60 Typ -- -- -- -- -- 6.5 8.5 60 6200 680 350 100 20 20 45 160 125 32 0.92 40 Max -- -- 10 10 2.5 8.5 13 -- -- -- -- -- -- -- -- -- -- -- -- -- Unit V V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VDS = 10 VNote4 ID = 20 A, VGS = 10 VNote4 ID = 20 A, VGS = 4.5 VNote4 ID = 20 A, VGS = 10 VNote4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 25 V VGS = 10 V ID = 50 A VGS = 10 V, ID = 20 A VDD 30 V RL = 1.5 Rg = 4.7 IF = 50 A, VGS = 0 IF = 50 A, VGS = 0 diF/dt = 100 A/s
Gate to source breakdown Voltage V(BR)GSS 20 Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf trr IGSS IDSS VGS(off) RDS(on) -- -- 1.5 -- -- 40 -- -- -- -- -- -- -- -- -- -- -- --
Body-drain diode forward voltage VDF Body-drain diode reverse recovery time Notes: 4. Pulse test
Rev.1.00, Dec.04.2003, page 3 of 9
H7N0608FM
Main Characteristics
Power vs. Temperature Derating 40
Pch (W)
Maximum Safe Operation Area 1000 300
(A)
10
10
0 s
30
100 30 10 3 1 0.3 Operation in 0.1 limited by RDS(on) 0.03 Ta = 25C 0.01 0.1 0.3 1
this area is
DC Operation (Tc = 25C) PW = 10 ms (1 shot)
s
1
ID
s m
Channel Dissipation
20
10
0
Drain Current
50
100
150 Tc (C)
200
3
10
30 VDS
100 (V)
Case Temperature
Drain to Source Voltage
Typical Output Characteristics 100 10 V 4.5 V 4.0 V Pulse Test
(A)
Typical Transfer Characteristics 100 VDS = 10 V Pulse Test
(A)
80
80
ID
60
ID Drain Current
3.6 V
60
Drain Current
40 VGS = 3.2 V 20
40 Tc = 150C 25C -40C
20
0
2
4
6
8 VDS (V)
10
0
2
4
6
8 VGS
10 (V)
Drain to Source Voltage
Gate to Source Voltage
Rev.1.00, Dec.04.2003, page 4 of 9
H7N0608FM
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Saturation Voltage VDS(on) (mV)
Static Drain to Source on State Resistance vs. Drain Current
Drain to Source on State Resistance RDS(on) (m)
100
500
Pulse Test
Pulse Test
30
400 ID = 50 A 300
10
VGS = 4.5 V 10 V
200 20 A 100 10 A
3
0
4
8
12
16 VGS (V)
1
20
1
3
Gate to Source Voltage
30 100 300 1000 10 Drain Current ID (A)
Drain to Source on State Resistance RDS(on) (m)
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test 16 50 A 10, 20 A 8 4.5 V
Forward Transfer Admittance vs. Drain Current 1000 300 100 30 25C 10 3 1 0.3 0.1 0.1 0.3 1 3 10 (A) 30 100 150C VDS = 10 V Pulse Test Tc = -40C
12
4
VGS = 10 V
10, 20, 50 A
0 -50 -25
0
25
50 75 100 125 150 Tc (C)
Case Temperature
Drain Current ID
Rev.1.00, Dec.04.2003, page 5 of 9
H7N0608FM
Body-Drain Diode Reverse Recovery Time di / dt = 100 A / s VGS = 0, Ta = 25C Typical Capacitance vs. Drain to Source Voltage Ciss
1000
10000 3000
Reverse Recovery Time trr (ns)
300 100 30 10 3 1 0.1
Capacitance C (pF)
1000 Coss 300 100 30 10 0 VGS = 0 f = 1 MHz 10 20 30 40 (V) 50 Crss
0.3
1
3
10
30 IDR (A)
100
Reverse Drain Current
Drain to Source Voltage VDS
Dynamic Input Characteristics 100
VDS (V)
VGS 16
(V)
ID = 50 A
20
1000 300 tf
Switching Characteristics
VGS
Switching Time t (ns)
80 VDD = 50 V 25 V 10 V
tr td(off)
Drain to Source Voltage
Gate to Source Voltage
100 td(on) 30 tr 10 VGS = 10 V, VDD = 30 V 3 PW = 5 s, duty < 1 % Rg = 4.7 1 0.1 0.3 3 10 1 Drain Current ID tf
60
VDS
12
40
8
20
VDD = 50 V 25 V 10 V 40 80 120 160 Gate Charge Qg (nc)
4 0 200
0
30 (A)
100
Rev.1.00, Dec.04.2003, page 6 of 9
H7N0608FM
Reverse Drain Current vs. Source to Drain Voltage 100 Maximum Avalanche Energy vs. Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
200 IAP = 40 A VDD = 25 V duty < 0.1 % Rg > 50
(A)
Reverse Drain Current
IDR
80
10 V
160
60
120
40
5V VGS = 0, -5 V Pulse Test
80
20
40 0 25
0
0.4
0.8
1.2
1.6 VSD
2.0 (V)
Source to Drain Voltage
50 75 100 125 Channel Temperature Tch (C)
150
Avalanche Test Circuit EAR =
Avalanche Waveform 1 2 * L * I AP * 2 VDSS VDSS - V DD
V DS Monitor
L I AP Monitor
V (BR)DSS I AP VDD ID V DS
Rg Vin 15 V
D. U. T
50 0 VDD
Rev.1.00, Dec.04.2003, page 7 of 9
H7N0608FM
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
1
D=1 0.5 0.2
0.1
Tc = 25C
0.3
0.1
0.05
0.02
0.01
lse pu
0.03
0.01
1s
ho
t
ch - c(t) = s (t) * ch - c ch - c = 4.16C/ W, Tc = 25C
PDM
D=
PW T
PW T
0.003 0.001 10
100
1m
10 m
100 m
1
10
100
Pulse Width PW (S)
Switching Time Test Circuit
Waveform
Vin Monitor Rg D.U.T. RL
Vout Monitor Vin Vout 10% 10% 90% td(on) tr 90% td(off)
90%
10%
Vin 10 V
V DS = 30 V
tf
Rev.1.00, Dec.04.2003, page 8 of 9
H7N0608FM
Package Dimensions
10.0 0.3 7.0 0.3 3.2 0.2 2.8 0.2 2.5 0.2
As of January, 2003
Unit: mm
0.6
5.0 0.3
2.0 0.3
1.2 0.2 1.4 0.2
12.0 0.3
4.45 0.3 2.5
0.7 0.1 2.54 0.5 2.54 0.5
0.5 0.1
Package Code JEDEC JEITA Mass (reference value) TO-220FM -- Conforms 1.8 g
Rev.1.00, Dec.04.2003, page 9 of 9
14.0 1.0
17.0 0.3
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