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SMD Type NPN Silicon Planar Medium Power High Gain Transistor FZT690B SOT-223 +0.2 6.50-0.2 Transistors Unit: mm +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 Very low equivalent on-resistance; RCE(sat) 125mU at 2A. Gain of 400 at IC=1 Amp. Very low saturation voltage. +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 2 2.9 4.6 3 +0.1 0.70-0.1 1 base 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO IC ICM Ptot Tj,Tstg Rating 45 45 5 3 6 2 -55 to +150 Unit V V V A A W +0.15 1.65-0.15 Features www.kexin.com.cn 1 SMD Type FZT690B Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-Emitter Turn-On Voltage * Symbol Testconditons Min 45 45 5 Typ Transistors Max Unit V V V V(BR)CBO IC=100iA V(BR)CEO IC=10mA V(BR)EBO IE=100iA ICBO IEBO VCB=35V VEB=4V 0.1 0.1 0.1 0.5 0.9 0.9 500 400 100 50 150 200 16 33 1300 iA iA V V V IC=0.1A, IB=0.5mA VCE(sat) IC=1A, IB=5mA VBE(sat) IC=1A, IB=10mA VBE(on) IC=1A, VCE=2V IC=100mA, VCE=2V IC=1A, VCE=2V IC=2A, VCE=2V IC=3A, VCE=2V IC=50mA, VCE=5V f=50MHz VEB=0.5V, f=1MHz VCB=10V, f=1MHz IC=500mA, VCC=10V IB1=50mA,IB2=50mA Static Forward Current Transfer Ratio * hFE Transitional frequency Input capacitance Output capacitance Turn-on time Turn-off time * Pulse test: tp = 300 is; d 0.02. fT Cibo Cobo t(on) t(off) MHz pF pF ns ns Marking Marking FZT690B 2 www.kexin.com.cn |
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