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Datasheet File OCR Text: |
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-126 package Complement to type BD234 /236 /238 APPLICATIONS For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base BD233 BD235 BD237 Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO PARAMETER CONDITIONS BD233 BD235 Collector-base voltage VCEO HAN INC Collector-emitter voltage Emitter -base voltage Collector current (DC) Collector current-Peak Collector power dissipation Junction temperature Storage temperature BD237 BD233 BD235 SEM GE Open emitter Open base OND IC TOR UC VALUE 45 60 100 45 60 80 UNIT V V BD237 VEBO IC ICM PC Tj Tstg Open collector 5 2 6 V A A W ae ae TC=25ae 25 150 -65~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage BD233 VCEO(SUS) Collector-emitter sustaining voltage BD235 BD237 BD233 ICBO Collector cut-off current BD235 BD237 VCB=45V; IE=0 VCB=60V; IE=0 VCB=100V; IE=0 VEB=5V; IC=0 IC=0.1A; IB=0 CONDITIONS IC=1A; IB=0.1A IC=1A ; VCE=2V BD233 BD235 BD237 SYMBOL VCEsat VBE MIN TYP. MAX 0.6 1.3 UNIT V V 45 60 80 V 100 |I A IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency HAN INC SEM GE IC=150mA ; VCE=2V IC=1A ; VCE=2V OND IC 40 25 3 TOR UC 1 mA IC=250mA; VCE=10V MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD233 BD235 BD237 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
Price & Availability of BD237
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