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| DC COMPONENTS CO., LTD. R 2N3904 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose switching and amplifier applications. TO-92 Pinning 1 = Emitter 2 = Base 3 = Collector .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ o o Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 60 40 6 200 625 +150 -55 to +150 Unit V V V mA mW o o .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36) .050 Typ (1.27) 321 .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) C C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICEX (1) Min 60 40 6 0.65 40 70 100 60 30 300 2% Typ - Max 50 0.2 0.3 0.85 0.95 300 4 Unit V V V nA V V V V MHz pF Test Conditions IC=10A, IE=0 IC=1mA, IB=0 IE=10A, IC=0 VCE=30V, VBE=3V IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=0.1mA, VCE=1V IC=1mA, VCE=1V IC=10mA, VCE=1V IC=50mA, VCE=1V IC=100mA, VCE=1V IC=10mA, VCE=20V, f=100MHz VCB=5V, f=1MHz, IE=0 Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage (1) VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 DC Current Gain (1) hFE3 hFE4 hFE5 Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width fT Cob 380s, Duty Cycle |
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