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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N3196 DESCRIPTION *With TO-3 package *Excellent safe operating area *Low collector saturation voltage APPLICATIONS *For medium-speed switching and amplifier applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -60 -60 -5 -5 75 150 -65~200 UNIT V V V A W THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-0.2A ;IB=0 IC=-5A; IB=-1A IC=-5A ; VCE=-4V VCE=Rated VCEO; IB=0 VCB=Rated VCBO; IE=0 VEB=-5V; IC=0 IC=-0.3A ; VCE=-4V IC=-3A ; VCE=-4V 30 15 MIN -60 TYP. 2N3196 SYMBOL VCEO(SUS) VCE(sat) VBE(on) ICEO ICBO IEBO hFE-1 hFE-2 MAX UNIT V -1.5 -2.0 -5.0 -0.1 -1.0 V V mA mA mA 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N3196 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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