 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| STB11NK40Z - STP11NK40ZFP STP11NK40Z N-channel 400V - 0.49 - 9A TO-220 - TO-220FP - D2PAK Zener-protected SuperMESHTM Power MOSFET General features Type STB11NK40Z STP11NK40Z STP11NK40ZFP VDSS 400V 400V 400V RDS(on) <0.55 <0.55 <0.55 ID 10A 10A 10A Pw 110W 110W 1 3 3 2 1 2 30W TO-220 TO-220FP Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability 1 3 D2PAK Description The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Internal schematic diagram Applications Switching application Order codes Part number STB11NK40ZT4 STP11NK40Z STP11NK40ZFP Marking B11NK40Z P11NK40Z P11NK40ZFP Package DPAK TO-220 TO-220FP Packaging Tape & reel Tube Tube January 2007 Rev 6 1/16 www.st.com 16 Contents STB11NK40Z - STP11NK40ZFP - STP11NK40Z Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 STB11NK40Z - STP11NK40ZFP - STP11NK40Z Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VDGR VGS ID ID IDM(2) PTOT Absolute maximum ratings Value Parameter TO-220/DPAK Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20K) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC=100C Drain current (pulsed) Total dissipation at TC = 25C Derating Factor 9 5.67 36 110 0.88 3500 4.5 --55 to 150 2500 400 400 30 9(1) 5.67(1) 36(1) 30 0.24 TO-220FP V V V A A A W W/C V V/ns V C Unit VESD(G-S) dv/dt(3) VISO TJ Tstg Gate source ESD (HBM-C= 100pF, R= 1.5k) Peak diode recovery voltage slope Insulation withstand voltage (DC) Operating junction temperature Storage temperature 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD 9A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX. Table 2. Symbol Rthj-case Rthj-a Tl Thermal data Value Parameter TO-220/DPAK Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose 1.14 62.5 300 TO-220FP 4.2 C/W C/W C Unit Table 3. Symbol IAR EAS Avalanche characteristics Parameter Avalanche current, repetitive or notrepetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25C, Id=Iar, Vdd=50V) Value 9 190 Unit A mJ 3/16 Electrical characteristics STB11NK40Z - STP11NK40ZFP - STP11NK40Z 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1mA, VGS= 0 VDS = Max rating, VDS = Max rating @125C VGS = 20V, VDS = 0 VDS= VGS, ID = 100A VGS= 10V, ID= 4.5A 3 3.75 0.49 Min. 400 1 50 10 Typ. Max. Unit V A A A V 4.5 0.55 Table 5. Symbol gfs (1) Ciss Coss Crss Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Test conditions VDS =15V, ID = 4.5A Min. Typ. 5.8 930 140 30 78 32 6 18.5 Max. Unit S pF pF pF pF nC nC nC VDS =25V, f=1 MHz, VGS=0 Coss eq(2). Equivalent output capacitance Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VGS=0, VDS =0V to 320V VDD=320V, ID = 9A VGS =10V (see Figure 17) 1. Pulsed: pulse duration=300s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS inceases from 0 to 80% VDSS 4/16 STB11NK40Z - STP11NK40ZFP - STP11NK40Z Electrical characteristics Table 6. Symbol td(on) tr td(off) tf tr(Voff) tf tc Switching times Parameter Turn-on Delay Time Rise Time Test conditions VDD=200 V, ID=4.5A, RG=4.7, VGS=10V (see Figure 19) VDD=200V, ID=4.5A, RG=4.7, VGS=10V (see Figure 19) VDD=320V, ID=9A, RG=4.7, VGS=10V (see Figure 19) Min. Typ. 20 20 Max. Unit ns ns Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time 40 18 15 17 30 ns ns ns ns ns Table 7. Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=9A, VGS=0 ISD=9A, di/dt = 100A/s, VDD=45V, Tj=150C 225 1.6 14 Test conditions Min Typ. Max 9 36 1.6 Unit A A V ns C A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5% Table 8. Symbol BVGSO(1) Gate-source zener diode Parameter Gate-source breakdown voltage Test conditions Igs=1mA (open drain) Min. 30 Typ. Max. Unit V 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. 5/16 Electrical characteristics STB11NK40Z - STP11NK40ZFP - STP11NK40Z 2.1 Figure 1. Electrical characteristics (curves) Safe operating area for TO-220 DPAK Figure 2. Thermal impedance for TO-220 DPAK Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Output characterisics Figure 6. Transfer characteristics 6/16 STB11NK40Z - STP11NK40ZFP - STP11NK40Z Figure 7. Transconductance Figure 8. Electrical characteristics Static drain-source on resistance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Figure 12. Normalized on resistance vs temperature 7/16 Electrical characteristics Figure 13. Source-drain diode forward characteristics STB11NK40Z - STP11NK40ZFP - STP11NK40Z Figure 14. Normalized BVDSS vs temperature Figure 15. Maximum avalanche energy vs temperature 8/16 STB11NK40Z - STP11NK40ZFP - STP11NK40Z Test circuit 3 Test circuit Figure 17. Gate charge test circuit Figure 16. Switching times test circuit for resistive load Figure 18. Test circuit for inductive load Figure 19. Unclamped Inductive load test switching and diode recovery times circuit Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform 9/16 Package mechanical data STB11NK40Z - STP11NK40ZFP - STP11NK40Z 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/16 STB11NK40Z - STP11NK40ZFP - STP11NK40Z Package mechanical data TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q 11/16 Package mechanical data STB11NK40Z - STP11NK40ZFP - STP11NK40Z TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O A B L3 L6 L7 F1 F D G1 H F2 L2 L5 E 123 L4 12/16 G STB11NK40Z - STP11NK40ZFP - STP11NK40Z Package mechanical data D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 3 1 13/16 Packaging mechanical data STB11NK40Z - STP11NK40ZFP - STP11NK40Z 5 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 14/16 STB11NK40Z - STP11NK40ZFP - STP11NK40Z Revision history 6 Revision history Table 9. Date 23-Aug-2005 28-Oct-2005 26-Jul-2006 22-Nov-2006 18-Jan-2007 Revision history Revision 2 3 4 5 6 Preliminary version Complete version New template, no content change Corrected unit on Table 4.: On/off states Typo mistakes on page 1 Changes 15/16 STB11NK40Z - STP11NK40ZFP - STP11NK40Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 16/16 |
Price & Availability of STB11NK40ZT4
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |