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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors D44Q1/3/5 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS) = 125V(Min)- D44Q1 = 175V(Min)- D44Q3 = 225V(Min)- D44Q5 *High Switching Speed *Low Saturation Voltage APPLICATIONS *Designed for linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER D44Q1 VCBO Collector-Base Voltage D44Q3 D44Q5 D44Q1 VCEO Collector-Emitter Voltage D44Q3 D44Q5 VEBO IC PC PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @ TC=25 Collector Power Dissipation @ Ta=25 Junction Temperature Storage Temperature Range VALUE 200 250 300 125 175 225 7 4 31.25 W 1.67 150 -65~150 V A V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 4 75 UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER D44Q1 VCEO(SUS) Collector-Emitter Sustaining Voltage D44Q3 D44Q5 VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage D44Q1 ICBO Collector Cutoff Current D44Q3 D44Q5 hFE-1 hFE-2 fT COB DC Current Gain DC Current Gain Current-Gain--Bandwidth Product Output Capacitance IC= 2A; IB= 0.2A B D44Q1/3/5 CONDITIONS MIN 125 TYP. MAX UNIT IC= 10mA ;IB= 0 B 175 225 1.0 1.3 10 10 10 30 20 20 32 V V V IC= 2A; IB= 0.2A B VCB= 200V;IE= 0 VCB= 250V;IE= 0 VCB= 300V;IE= 0 IC= 0.2A ; VCE= 10V IC= 2A ; VCE= 10V IC= 0.1A; VCE= 10V IE= 0; VCB= 10V; f= 1MHz A MHz pF Switching Times ton tstg tf Delay Time Storage Time Fall Time VCC= 50V IC= 1A; IB1= -IB2= 0.1A 5 0.4 2.0 1.7 s s s isc Websitewww.iscsemi.cn 2 |
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