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| To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch IGBT MITSUBISHI Nch IGBT CT90AM-18 CT90AM-18 INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLAR TRANSISTOR CT90AM-18 OUTLINE DRAWING 20MAX. Dimensions in mm 5 2 6 3.2 26 1 2 1 0.5 3 5.45 5.45 q VCES ............................................................................... 900V q IC ......................................................................................... 60A q Simple drive q Integrated Fast-recovery diode q Small tail loss q Low VCE Saturation Voltage 4.0 GATE COLLECTOR EMITTER COLLECTOR TO-3PL APPLICATION Microwave oven, Electoromagnetic cooking devices, Rice-cookers MAXIMUM RATINGS Symbol VCES VGES VGEM IC ICM IE PC Tj Tstg (Tc = 25C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current Collector current (Pulsed) Emitter current Maximum power dissipation Junction temperature Storage temperature VGE = 0V Conditions Ratings 900 25 30 60 120 40 250 -40 ~ +150 -40 ~ +150 20.6MIN. 2.5 Unit V V V A A A W C C Sep. 2000 MITSUBISHI Nch IGBT CT90AM-18 INSULATED GATE BIPOLAR TRANSISTOR ELECTRICAL CHARACTERISTICS Symbol ICES IGES VGE (th) VCE (sat) Cies Coes Cres td (on) tr td (off) tf Etail Itail VEC trr Rth (ch-c) Rth (ch-c) Parameter (Tj = 25C) Test conditions VCE = 900V, VGE = 0V VGE = 20V, VCE = 0V VCE = 10V, IC = 6mA IC = 60A, VGE = 15V VCE = 25V, VGE = 0V, f = 1MHz Limits Min. -- -- 2.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- 4.0 1.55 11000 180 125 0.05 0.10 0.20 0.30 0.6 6 -- 0.5 -- -- Max. 1.0 0.5 6.0 1.95 -- -- -- -- -- -- -- 1.0 12 3.0 2.0 0.5 4.0 Unit mA A V V pF pF pF s s s s mJ/pls A V s C/W C/W Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Tail loss Tail current Emitter-collector voltage Diode reverse recovery time Thermal resistance Thermal resistance VCC = 300V, IC = 60A, VGE = 15V, RG = 0 ICP = 60A, Tj = 125C, dv/dt = 200V/s IE = 60A, VGE = 0V IE = 60A, dis/dt = -20A/s Junction to case Junction to case Sep. 2000 |
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