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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1651
DESCRIPTION *With TO-3PML package *Built-in damper diode *High breakdown voltage *High speed switching APPLICATIONS *For color TV horizontal output applications
PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol
ABSOLUTE MAXIMUM RATINGS AT Tc=25
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 5 60 150 -55~150 UNIT V V V A W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
2SD1651
SYMBOL
TYP.
MAX
UNIT
VCEO(SUS) VCEsat VBEsat ICBO ICES IEBO hFE fT
Collector-emitter sustaining voltage
IC=0.1A , IB=0 IC=4A ;IB=0.8A IC=4A ;IB=0.8A VCB=800V; IE=0 VCES=1500V; RBE=> VEB=4V; IC=0 IC=1A ; VCE=5V IC=1A ; VCE=10V IF=5A
800
V
Collector-emitter saturation voltage
3.0
5.0
V
Base-emitter saturation voltage
1.5
V
Collector cut-off current
10
A
Collector cut-off current
1.0
mA
Emitter cut-off current
40
130
mA
DC current gain
8
Transition frequency
3
MHz
VF
Diode forward voltage
2.0
V
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1651
Fig.2 Outline dimensions (unindicated tolerance:0.15 mm)
3


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