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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA775 DESCRIPTION *With TO-220 package *High breakdown voltage APPLICATIONS *For TV vertical output amplifier applicatons PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -4 -0.7 12.5 150 -55~150 UNIT V V V A W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA775 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,IB=0 B -100 V V(BR)CBO V(BR)EBO Collector-base breakdown voltage IC=-10A ,IE=0 IE=-10A ,IC=0 -100 V Emitter-base breakdown voltage -4 V VCEsat Collector-emitter saturation voltage IC=-500mA; IB=-50mA B -1.0 V A A ICBO Collector cut-off current VCB=-100V; IE=0 -1.0 IEBO Emitter cut-off current VEB=-4V; IC=0 -1.0 hFE DC current gain IC=-50mA ; VCE=-4V 50 fT Transition frequency IC=-50mA ; VCE=-4V 30 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA775 Fig.2 Outline dimensions(unindicated tolerance:0.10 mm) 3 |
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