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Inchange Semiconductor Product Specification Silicon NPN Power Transistors KSC5021 DESCRIPTION *With TO-220C package *High voltage and high reliability *High speed switching *Wide area of safe operation * PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Collector dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 800 500 7 5 10 2 50 150 -55~150 UNIT V V V A A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT Cob PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=5mA ;IB=0 IC=1mA; IE=0 IE=1mA;IC=0 IC=3A ;IB=0.6A IC=3A ;IB=0.6A VCB=500V ;IE=0 VEB=5V; IC=0 IC=0.6A ; VCE=5V IC=3A ; VCE=5V IC=0.6A ; VCE=10V IE=0;f=1MHz ; VCB=10V 15 8 18 80 MIN 500 800 7 TYP. KSC5021 MAX UNIT V V V 1.0 1.5 10 10 50 V V A A MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=5IB1=-2.5IB2=4A VCC=200V;RL=50 0.5 3.0 0.3 s s s hFE-1 Classifications R 15-30 O 20-40 Y 30-50 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE KSC5021 Fig.2 Outline dimensions (unindicated tolerance:0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors KSC5021 4 |
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