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AON6718L N-Channel Enhancement Mode Field Effect Transistor
SRFET
TM
General Description
SRFETTM AON6718L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is ideally suited for use as a low side switch in CPU core power conversion.
Features
VDS (V) = 30V ID = 80A RDS(ON) < 3.7m RDS(ON) < 5m (VGS = 10V) (VGS = 10V) (VGS = 4.5V)
- RoHS Compliant - Halogen Free
100% UIS Tested! 100% R g Tested!
Fits SOIC8 footprint !
S S S G
D
Top View
D D D D G S SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode
DFN5X6 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25C Power Dissipation B Power Dissipation A TC=100C TA=25C TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case TA=25C TA=70C TC=25C TC=100C ID IDM IDSM IAR EAR PD PDSM TJ, TSTG
Maximum 30 20 80 63 210 19 15 40 80 83 33 2.5 1.6 -55 to 150
Units V V A
A A mJ W W C
Symbol t 10s Steady-State Steady-State RJA RJC
Typ 14.2 42 1.2
Max 17 60 1.5
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6718L
Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=30V, VGS=0V TJ=125C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 2975 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 485 204 0.28 48 VGS=10V, VDS=15V, ID=20A 20 12 6 VGS=10V, VDS=15V, RL=0.75, RGEN=3 IF=20A, dI/dt=500A/s 10 21 TJ=125C 1.2 160 3.1 4.3 4.1 87 0.4 1 40 3719 693 340 0.56 60 25 15 10 9.2 10.7 40 12.5 13 26.5 16 32 4463 900 476 0.84 72 30 18 14 3.7 5.2 5 1.8 Min 30 0.025 0.1 20 0.1 2.2 Typ Max Units V mA A V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s
A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with T =25C. The Power A dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initial T J =25C. D. The RJA is the sum of the thermal impedence from junction to case R and case to ambient. JC E. The static characteristics in Figures 1 to 6 are obtained using <300 pulses, duty cycle 0.5% max. s F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. A Rev0: Oct-08 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6718L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
160 10V 140 120 4V 100 ID (A) 80 60 40 20 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 6 5 VGS=4.5V RDS(ON) (m) 4 3 VGS=10V 2 1 0 0 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 5 10 Normalized On-Resistance 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 200 Temperature (C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) VGS=4.5V ID=20A VGS=10V ID=20A VGS=3V 5V 4.5V 3.5V ID(A) 10V 120 VDS=5V 100 80 60 40 125C 20 0 0 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 25C
17 5 2 10
9 ID=20A 7 RDS(ON) (m) IS (A) 125C 5
1.0E+02
40 1.0E+01
125C
1.0E+00 25C 1.0E-01
3
25C
1 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
1.0E-02 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6718L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 VDS=15V ID=20A Capacitance (pF) 6000 5000 4000 3000 2000 1000 0 0 30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics 10 20 60 0 Crss 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Coss Ciss
8
VGS (Volts)
6
4
2
0
1000.0 100.0 ID (Amps) 10.0 1.0 0.1 0.0 0.01 10s
400 320 Power (W) 240 160 80 0 0.0001 TJ(Max)=150C TC=25C
10s 100s
RDS(ON) limited
DC
1ms 10ms
TJ(Max)=150C TC=25C
17 5 2 10
0.1
1 VDS (Volts)
10
100
0.001
0.01
0.1
1
Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance
Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
0
10
D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=1.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6718L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200 IAR (A) Peak Avalanche Current 180 160 140 120 100 80 60 40 20 0 0.000001 0 0 25 50 75 100 125 150 TCASE (C) Figure 13: Power De-rating (Note F) 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) TA=150C TA=125C TA=100C TA=25C Power Dissipation (W) 80 60 40 20 100
100 80 Current rating ID(A)
10000 TA=25C 1000 Power (W)
60 40 20 0 0 25 50 75 100 125 150 TCASE (C) Figure 14: Current De-rating (Note F)
100
10
17 5 2 10
1 0.00001
0.001
0.1
10
1000
Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
0 18
10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 RJA=60C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
PD Single Pulse Ton T 100 1000
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON6718L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01 0.7 0.6 VDS=30V IR (A) 1.0E-03 VDS=15V VSD (V) 0.5 0.4 0.3 1.0E-05 0.2 0.1 0 100 150 200 Temperature (C) Figure 17: Diode Reverse Leakage Current vs. Junction Temperature 14 di/dt=800A/s 125C 25C Irm (A) 8 32 30 28 26 0 5 10 15 20 25 30 IS (A) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 35 30 25 Qrr (nC) 20 15 10 5 0 0 200 400 600 800 Irm Qrr 125C 25C Is=20A 125C 8 25C Irm (A) 6 4 2 0 1000 21 18 trr (ns) 15 12 9 6 25C 3 0 0 200 400 600 800 0 1000 125 S 0.5 125C 1.5 25C 1 S trr 10 24 Is=20A 2 Qrr Irm 125C 25C 2 0 6 4 12 10 16 14 12 trr (ns) 10 8 6 4 2 0 0 5 10 15 20 25 30 IS (A) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 2.5 S 125C 25C di/dt=800A/s trr 125C 50 0 100 150 200 Temperature (C) Figure 18: Diode Forward voltage vs. Junction Temperature 3 2.5 2 1.5 1 0.5 0 50 IS=1A 20A 10A
1.0E-02
1.0E-04
5A
1.0E-06
38 36 34 Qrr (nC)
25C
di/dt (A/s) Figure 21: Diode Reverse Recovery Charge and Peak Current vs. di/dt
di/dt (A/s) Figure 22: Diode Reverse Recovery Time and Softness Factor vs. di/dt
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
S
AON6718L
Gate Charge Test Circuit & W aveform
Vgs Qg
+
VDC
10V
VDC
DUT Vgs Ig
+ Vds -
Qgs
Qgd
Charge
Resistive Switching Test Circuit & Waveforms
RL Vds Vds
Vgs Rg
DUT
VDC
+ Vdd Vgs
t d(on) t on tr t d(off) t off tf
90%
10%
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L Vds Id Vgs Rg DUT Vgs Vgs Vgs Vds E AR= 1/2 LIAR
2
BVDSS
VDC
+ Vdd Id
I AR
Diode Recovery Test Circuit & Waveforms
Vds + DUT Vgs
t rr
Q rr = - Idt
Vds Isd Vgs Ig
L
Isd
IF
dI/dt I RM Vdd
VDC
+ Vdd Vds
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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