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| SMD Type NPN Silicon Transistor 2SC5342SF SOT-23 Transistors IC Features Large collector current: IC=500mA. Low collector saturation voltage enabling low-voltage operation. +0.1 2.4-0.1 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 40 32 5 500 200 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE Testconditons IC=100iA , IE=0 IC=1mA , IB=0 IE=10iA, IC=0 VCB=40V, IE=0 VEB=5V, IC=0 VCE=1V, IC=-100mA 70 Min 40 32 5 0.1 0.1 240 0.25 300 7.5 V MHz pF Typ Max Unit V V V iA iA VCE(sat) IC/IB=100mA/10mA fT Cob VCE=6V, IE=-20mA, VCB=6V, IE=0, f=1MHz hFE Classification Marking Rank hFE O 70 140 BA Y 120 240 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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