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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2937 DESCRIPTION *With TO-247 package *Switching power transistor *High breakdown voltage APPLICATIONS *For switching regulator applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-247) and symbol DESCRIPTION * Absolute maximum ratings(Tc=25) SYMBOL VCBO VCEO VEBO IC ICM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 500 400 7 8 16 80 150 -55~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2937 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO ICEO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency At rated voltage IC=4A ; VCE=2V IC=1mA ; VCE=2V IC=0.8A ; VCE=10V 10 5 20 MHz 0.1 50 mA 0.1 mA CONDITIONS IC=0.1A; IB=0 IC=4A ;IB=0.8A IC=4A ;IB=0.8A MIN 400 1.0 1.5 TYP. MAX UNIT V V V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2937 Fig.2 Outline dimensions 3 |
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