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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2245 DESCRIPTION *High Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min) *High Switching Speed APPLICATIONS *Power switching *Power amplification *Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage MAX 450 UNIT V Collector Current-Continuous Collector Current-Peak w ww scs .i 400 5 10 20 4 100 200 -65~200 V V .cn mi e A A A Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range PC Tj Tstg W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.0 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2245 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustainig Voltage IC= 100mA; L= 25mH 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 1.2 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 1.5 V hFE DC Current Gain IC= 4A; VCE= 5V VCB= 450V; IE= 0 TC=125 10 1.0 4.0 5.0 ICBO Collector Cutoff Current mA ICEO Collector Cutoff Current VCE= 400V; IB= 0 IEBO Emitter Cutoff Current Switching Times tr Rise Time tstg Storage Time w w scs .i w VEB= 5V; IC= 0 .cn mi e mA 1.0 mA 1.0 s IC=4A; IB1=- IB2= 0.8A 2.0 s tf Fall Time 1.0 s isc Websitewww.iscsemi.cn |
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