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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2139 DESCRIPTION *High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V (Min) *High Switching Speed APPLICATIONS *Switching regulator and high voltage switching applications. *High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w ww scs .i MAX 500 400 6 10 2 100 UNIT V V .cn mi e V A IB B Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature A PC W Tj 150 Tstg Storage Temperature Range -65~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2139 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 400 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 500 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 2.0 V hFE DC Current Gain IC= 5A; VCE= 5V ICBO Collector Cutoff Current IEBO Emitter Cutoff Current Switching Times tr Rise Time w w scs .i w VCB= 400V; IE= 0 VEB= 6V; IC= 0 .cn mi e 10 0.1 mA 1.0 mA 1.0 VCC= 200V; IB1= -IB2= 0.5A; RL= 40 s tstg Storage Time 2.0 s tf Fall Time 1.0 s isc Websitewww.iscsemi.cn |
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