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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area APPLICATIONS For use in high power audio amplifier applications and high voltage switching regulator circuits PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5758 2N5759 2N5760 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=ae ) SYMBOL PARAMETER CONDITIONS 2N5758 2N5759 VCBO Collector-base voltage VCEO CHA IN Emitter-base voltage Collector current GE S N 2N5760 2N5758 2N5759 2N5760 Open emitter EMIC OND TOR UC VALUE 100 120 140 100 120 140 UNIT V Collector-emitter voltage Open base V VEBO IC ICM IB PD Tj Tstg Open collector 7 6 10 4 V A A A W ae ae Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25ae 150 150 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2N5758 VCEO(SUS) Collector-emitter sustaining voltage 2N5759 2N5760 VCEsat-1 VCEsat-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage 2N5758 ICEO Collector cut-off current 2N5759 2N5760 IC=3A; IB=0.3A IC=6A ;IB=1.2A IC=3A ; VCE=2V VCE=50V; IB=0 VCE=60V; IB=0 VCE=70V; IB=0 IC=0.2A ;IB=0 CONDITIONS 2N5758 2N5759 2N5760 SYMBOL MIN 100 120 140 TYP. MAX UNIT V 1.0 2.0 1.5 V V V 1.0 mA ICEX ICBO IEBO Collector cut-off current Collector cut-off current VCE=ratedVCB; VBE(off)=1.5V TC=150ae VCE=ratedVCB; IB=0 VEB=7V; IC=0 Emitter cut-off current hFE-1 DC current gain INCH GE S AN 2N5758 2N5759 2N5760 EMIC OND 25 20 15 TOR UC 1.0 5.0 1.0 1.0 100 80 60 mA mA mA IC=3A ; VCE=2V hFE-2 COB fT DC current gain Output capacitance Transition frequency IC=6A ; VCE=2V IE=0 ; VCB=10V;f=0.1MHz IC=0.5A ; VCE=20V 5.0 300 1.0 pF MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5758 2N5759 2N5760 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.10mm) 3 |
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