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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP31/31A/31B/31C DESCRIPTION With TO-220C package Complement to type TIP32/32A/32B/32C APPLICATIONS Medium power linear switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO Collector-base voltage PARAMETER CONDITIONS TIP31 TIP31A TIP31B VCEO IN Collector-emitter voltage ANG CH TIP31C TIP31 EMIC ES Open emitter Open base Open collector OND TOR UC 40 60 80 100 40 60 VALUE UNIT V TIP31A TIP31B TIP31C V 80 100 5 3 5 1 V A A A w VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current (DC) Collector current-Pulse Base current TC=25ae Collector power dissipation Ta=25ae Junction temperature Storage temperature 40 2 150 -65~150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER TIP31 TIP31A IC=30mA; IB=0 TIP31B TIP31C VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage TIP31 TIP31A TIP31B TIP31C TIP31/31A TIP31B/31C IC=3A IB=0.375A IC=3A ; VCE=4V VCE=40V; VEB=0 VCE=60V; VEB=0 CONDITIONS TIP31/31A/31B/31C SYMBOL MIN 40 60 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 80 100 1.2 1.8 V V ICES Collector cut-off current ICEO IEBO hFE-1 hFE-2 fT HAN C 0.2 VCE=80V; VEB=0 VCE=100V; VEB=0 VCE=30V; IB=0 mA Collector cut-off current Emitter cut-off current DC current gain DC current gain Transiton frequency IN SEM GE VEB=5V; IC=0 VCE=60V; IB=0 OND IC 25 10 3 TOR UC 0.3 1.0 mA mA IC=1A ; VCE=4V IC=3A ; VCE=4V IC=0.5A ; VCE=10V 50 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE TIP31/31A/31B/31C SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP31/31A/31B/31C SEM GE HAN INC OND IC TOR UC 4 |
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