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SMD Type
Transistors
Silicon NPN Triple Diffusion Junction Type 2SD1252,2SD1252A
TO-252
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
Power transistors.
+0.15 1.50 -0.15
6.50 +0.2 5.30-0.2
+0.15 -0.15
+0.2 9.70 -0.2
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage 2SD1252 2SD1252A Collector-emitter voltage 2SD1252 2SD1252A Emitter-base voltage Collector current Peak collector current Collector power dissipation Ta = 25 Tc = 25 Junction temperature Storage temperature Tj Tstg VEBO IC ICP PC VCEO Symbol VCBO Rating 60 80 60 80 6 3 5 1.3 35 150 -55 to +150 Unit V V V V V A A W W
3.80
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1
SMD Type
2SD1252,2SD1252A
Electrical Characteristics Ta = 25
Parameter Collector-emitter voltage 2SD1252 2SD1252A Base-emitter voltage Collector-emitter cutoff current 2SD1252 2SD1252A Collector-emitter cutoff current 2SD1252 2SD1252A Emitter-base cutoff current Forward current transfer ratio Forward current transfer ratio Collector-emitter saturation voltage Transition frequency 2SD1252 2SD1252A Turn-on time Storage time Fall time ton tstg tf IC=1A IB1=-IB2=0.1 A VCC=50V IEBO hFE ICEO VBE ICES VCE = 4 V, IC = 3 A VCE = 60 V, VBE = 0 VCE = 80 V, VBE = 0 VCE = 30 V, IB = 0 VCE = 40 V, IB = 0 VEB = 6 V, IC = 0 VCE = 4 V, IC = 1 A VCE = 4 V, IC = 3 A VCE(sat) IC = 3 A, IB = 0.375 A fT VCE = 5 V, IC = 0.5 A, f = 10 MHz Symbol VCEO Testconditons IC = 30 mA, IB = 0
Transistors
Min 60 80
Typ
Max
Unit V V
1.8 200 200 300 300 1 40 10 1.2 30 25 0.5 2.5 0.4 250
V iA iA iA iA mA
V MHz MHz is is is
hFE Classification
Rank hFE R 40 90 Q 70 150 P 120 250
2
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